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Electroluminescence from Thin Silicon Dioxide Films. / Baraban, A. P.; Semykina, E. A.; Vaniouchov, M. B.

в: Physics of Low-Dimensional Structures, Том 2000, № 3-4, 01.12.2000, стр. 27-36.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Baraban, AP, Semykina, EA & Vaniouchov, MB 2000, 'Electroluminescence from Thin Silicon Dioxide Films', Physics of Low-Dimensional Structures, Том. 2000, № 3-4, стр. 27-36.

APA

Baraban, A. P., Semykina, E. A., & Vaniouchov, M. B. (2000). Electroluminescence from Thin Silicon Dioxide Films. Physics of Low-Dimensional Structures, 2000(3-4), 27-36.

Vancouver

Baraban AP, Semykina EA, Vaniouchov MB. Electroluminescence from Thin Silicon Dioxide Films. Physics of Low-Dimensional Structures. 2000 Дек. 1;2000(3-4):27-36.

Author

Baraban, A. P. ; Semykina, E. A. ; Vaniouchov, M. B. / Electroluminescence from Thin Silicon Dioxide Films. в: Physics of Low-Dimensional Structures. 2000 ; Том 2000, № 3-4. стр. 27-36.

BibTeX

@article{9c8976f107fd4b8580f126b92fdf94c7,
title = "Electroluminescence from Thin Silicon Dioxide Films",
abstract = "Electroluminescence from SiO 2 has been studied both experimentally and theoretically. Numerical simulations have been carried out to investigate electroluminescence and impact ionization processes. Firm connect between electroluminescence and impact ionization has been shown.",
author = "Baraban, {A. P.} and Semykina, {E. A.} and Vaniouchov, {M. B.}",
year = "2000",
month = dec,
day = "1",
language = "English",
volume = "2000",
pages = "27--36",
journal = "Physics of Low-Dimensional Structures",
issn = "0204-3467",
publisher = "Институт физики твердого тела РАН",
number = "3-4",

}

RIS

TY - JOUR

T1 - Electroluminescence from Thin Silicon Dioxide Films

AU - Baraban, A. P.

AU - Semykina, E. A.

AU - Vaniouchov, M. B.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Electroluminescence from SiO 2 has been studied both experimentally and theoretically. Numerical simulations have been carried out to investigate electroluminescence and impact ionization processes. Firm connect between electroluminescence and impact ionization has been shown.

AB - Electroluminescence from SiO 2 has been studied both experimentally and theoretically. Numerical simulations have been carried out to investigate electroluminescence and impact ionization processes. Firm connect between electroluminescence and impact ionization has been shown.

UR - http://www.scopus.com/inward/record.url?scp=0347687265&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0347687265

VL - 2000

SP - 27

EP - 36

JO - Physics of Low-Dimensional Structures

JF - Physics of Low-Dimensional Structures

SN - 0204-3467

IS - 3-4

ER -

ID: 41823806