Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Electrochemical model of polyaniline-based memristor with mass transfer step. / Demin, V. A.; Erokhin, V. V.; Kashkarov, P. K.; Kovalchuk, M. V.
Proceedings of the International Conference on Numerical Analysis and Applied Mathematics 2014, ICNAAM 2014. ред. / Theodore E. Simos; Theodore E. Simos; Theodore E. Simos; Charalambos Tsitouras. American Institute of Physics, 2015. 280005 (AIP Conference Proceedings; Том 1648).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Electrochemical model of polyaniline-based memristor with mass transfer step
AU - Demin, V. A.
AU - Erokhin, V. V.
AU - Kashkarov, P. K.
AU - Kovalchuk, M. V.
N1 - Publisher Copyright: © 2015 AIP Publishing LLC.
PY - 2015/3/10
Y1 - 2015/3/10
N2 - The electrochemical organic memristor with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, such as the new field-programmable gate arrays or the neuromorphic networks capable for learning. In this work a new theoretical model of the polyaniline memristor is presented. The developed model of organic memristor functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device including the mass transfer step of ionic reactants. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment, but also quantitative similarities of the resultant current values. This model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices.
AB - The electrochemical organic memristor with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, such as the new field-programmable gate arrays or the neuromorphic networks capable for learning. In this work a new theoretical model of the polyaniline memristor is presented. The developed model of organic memristor functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device including the mass transfer step of ionic reactants. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment, but also quantitative similarities of the resultant current values. This model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices.
KW - Adaptive networks
KW - Artificial intelligence
KW - Memristor
KW - Neurocomputer
KW - Neuromorphic computations
UR - http://www.scopus.com/inward/record.url?scp=84939648347&partnerID=8YFLogxK
U2 - 10.1063/1.4912534
DO - 10.1063/1.4912534
M3 - Conference contribution
AN - SCOPUS:84939648347
T3 - AIP Conference Proceedings
BT - Proceedings of the International Conference on Numerical Analysis and Applied Mathematics 2014, ICNAAM 2014
A2 - Simos, Theodore E.
A2 - Simos, Theodore E.
A2 - Simos, Theodore E.
A2 - Tsitouras, Charalambos
PB - American Institute of Physics
T2 - International Conference on Numerical Analysis and Applied Mathematics 2014, ICNAAM 2014
Y2 - 22 September 2014 through 28 September 2014
ER -
ID: 88205856