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Electrical properties of a SiC-Si multilayer structure. / Bozhevol'nov, V.B.; Yafyasov, A.M.; Miailovskii, V.Y.; Egorova, Y.V.; Sokolov, A.A.; Filatova, E.O.

в: Semiconductors, № 6, 2014, стр. 792-795.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Bozhevol'nov, VB, Yafyasov, AM, Miailovskii, VY, Egorova, YV, Sokolov, AA & Filatova, EO 2014, 'Electrical properties of a SiC-Si multilayer structure', Semiconductors, № 6, стр. 792-795. https://doi.org/10.1134/S1063782614060074

APA

Bozhevol'nov, V. B., Yafyasov, A. M., Miailovskii, V. Y., Egorova, Y. V., Sokolov, A. A., & Filatova, E. O. (2014). Electrical properties of a SiC-Si multilayer structure. Semiconductors, (6), 792-795. https://doi.org/10.1134/S1063782614060074

Vancouver

Bozhevol'nov VB, Yafyasov AM, Miailovskii VY, Egorova YV, Sokolov AA, Filatova EO. Electrical properties of a SiC-Si multilayer structure. Semiconductors. 2014;(6):792-795. https://doi.org/10.1134/S1063782614060074

Author

Bozhevol'nov, V.B. ; Yafyasov, A.M. ; Miailovskii, V.Y. ; Egorova, Y.V. ; Sokolov, A.A. ; Filatova, E.O. / Electrical properties of a SiC-Si multilayer structure. в: Semiconductors. 2014 ; № 6. стр. 792-795.

BibTeX

@article{f52f86b2175e4df391f6b9cd9ad84322,
title = "Electrical properties of a SiC-Si multilayer structure",
abstract = "The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes. {\textcopyright} 2014 Pleiades Publishing, Ltd.",
author = "V.B. Bozhevol'nov and A.M. Yafyasov and V.Y. Miailovskii and Y.V. Egorova and A.A. Sokolov and E.O. Filatova",
year = "2014",
doi = "10.1134/S1063782614060074",
language = "English",
pages = "792--795",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Electrical properties of a SiC-Si multilayer structure

AU - Bozhevol'nov, V.B.

AU - Yafyasov, A.M.

AU - Miailovskii, V.Y.

AU - Egorova, Y.V.

AU - Sokolov, A.A.

AU - Filatova, E.O.

PY - 2014

Y1 - 2014

N2 - The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes. © 2014 Pleiades Publishing, Ltd.

AB - The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes. © 2014 Pleiades Publishing, Ltd.

U2 - 10.1134/S1063782614060074

DO - 10.1134/S1063782614060074

M3 - Article

SP - 792

EP - 795

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 7049494