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Effects of surface adhesion of nonequilibrium charge carriers in the photoconductivity spectra of CdS crystals. / Batyrev, A.S.; Bisengaliev, R.A.; Novikov, B.V.; Shividov, N.K.

в: Technical Physics, № 9, 2013, стр. 1263-1266.

Результаты исследований: Научные публикации в периодических изданияхстатья

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Batyrev, A.S. ; Bisengaliev, R.A. ; Novikov, B.V. ; Shividov, N.K. / Effects of surface adhesion of nonequilibrium charge carriers in the photoconductivity spectra of CdS crystals. в: Technical Physics. 2013 ; № 9. стр. 1263-1266.

BibTeX

@article{e6737938541a4bf9991bd3487a908665,
title = "Effects of surface adhesion of nonequilibrium charge carriers in the photoconductivity spectra of CdS crystals",
abstract = "The relaxation of low-temperature (T = 77 K) edge photoconductivity (PC) spectra of CdS crystals of the first group1 caused by the removal of the transverse electric field is investigated. A clearly manifested inversion of the fine (exciton) structure is found in the spectra during their relaxation to the initial form (existing before the application of the field). It is shown that the observed relaxation changes in the PC spectra of CdS are due to relaxation of the nonequilibrium surface charge appearing as a result of trapping of a part of the charge, induced by the transverse field into the sample, by slow surface states (adhesion levels). The experimental data on the effect of preliminary illumination by self-radiation on the edge PC spectra of the first-group CdS crystals indicating the existence of surface adhesion levels with a high density in these crystals are presented. {\textcopyright} 2013 Pleiades Publishing, Ltd.",
author = "A.S. Batyrev and R.A. Bisengaliev and B.V. Novikov and N.K. Shividov",
year = "2013",
doi = "10.1134/S1063784213090090",
language = "English",
pages = "1263--1266",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "Pleiades Publishing",
number = "9",

}

RIS

TY - JOUR

T1 - Effects of surface adhesion of nonequilibrium charge carriers in the photoconductivity spectra of CdS crystals

AU - Batyrev, A.S.

AU - Bisengaliev, R.A.

AU - Novikov, B.V.

AU - Shividov, N.K.

PY - 2013

Y1 - 2013

N2 - The relaxation of low-temperature (T = 77 K) edge photoconductivity (PC) spectra of CdS crystals of the first group1 caused by the removal of the transverse electric field is investigated. A clearly manifested inversion of the fine (exciton) structure is found in the spectra during their relaxation to the initial form (existing before the application of the field). It is shown that the observed relaxation changes in the PC spectra of CdS are due to relaxation of the nonequilibrium surface charge appearing as a result of trapping of a part of the charge, induced by the transverse field into the sample, by slow surface states (adhesion levels). The experimental data on the effect of preliminary illumination by self-radiation on the edge PC spectra of the first-group CdS crystals indicating the existence of surface adhesion levels with a high density in these crystals are presented. © 2013 Pleiades Publishing, Ltd.

AB - The relaxation of low-temperature (T = 77 K) edge photoconductivity (PC) spectra of CdS crystals of the first group1 caused by the removal of the transverse electric field is investigated. A clearly manifested inversion of the fine (exciton) structure is found in the spectra during their relaxation to the initial form (existing before the application of the field). It is shown that the observed relaxation changes in the PC spectra of CdS are due to relaxation of the nonequilibrium surface charge appearing as a result of trapping of a part of the charge, induced by the transverse field into the sample, by slow surface states (adhesion levels). The experimental data on the effect of preliminary illumination by self-radiation on the edge PC spectra of the first-group CdS crystals indicating the existence of surface adhesion levels with a high density in these crystals are presented. © 2013 Pleiades Publishing, Ltd.

U2 - 10.1134/S1063784213090090

DO - 10.1134/S1063784213090090

M3 - Article

SP - 1263

EP - 1266

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 9

ER -

ID: 7521259