Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors. / Glazov, M. M.; Ivchenko, E. L.
в: Journal of Experimental and Theoretical Physics, Том 99, № 6, 01.12.2004, стр. 1279-1290.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors
AU - Glazov, M. M.
AU - Ivchenko, E. L.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.
AB - An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.
UR - http://www.scopus.com/inward/record.url?scp=28244443893&partnerID=8YFLogxK
U2 - 10.1134/1.1854815
DO - 10.1134/1.1854815
M3 - Article
AN - SCOPUS:28244443893
VL - 99
SP - 1279
EP - 1290
JO - Journal of Experimental and Theoretical Physics
JF - Journal of Experimental and Theoretical Physics
SN - 1063-7761
IS - 6
ER -
ID: 36659691