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Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. / Pastor, A.A.; Prokhorova, U.V.; Serdobintsev, P.Y.; Chaldyshev, V.V.; Yagovkina, M.A.

в: Semiconductors, № 8, 2013, стр. 1137-1140.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Pastor, AA, Prokhorova, UV, Serdobintsev, PY, Chaldyshev, VV & Yagovkina, MA 2013, 'Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures', Semiconductors, № 8, стр. 1137-1140. https://doi.org/10.1134/S1063782613080150

APA

Pastor, A. A., Prokhorova, U. V., Serdobintsev, P. Y., Chaldyshev, V. V., & Yagovkina, M. A. (2013). Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. Semiconductors, (8), 1137-1140. https://doi.org/10.1134/S1063782613080150

Vancouver

Pastor AA, Prokhorova UV, Serdobintsev PY, Chaldyshev VV, Yagovkina MA. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. Semiconductors. 2013;(8):1137-1140. https://doi.org/10.1134/S1063782613080150

Author

Pastor, A.A. ; Prokhorova, U.V. ; Serdobintsev, P.Y. ; Chaldyshev, V.V. ; Yagovkina, M.A. / Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. в: Semiconductors. 2013 ; № 8. стр. 1137-1140.

BibTeX

@article{089a500025674a188a6191268f5ae2c1,
title = "Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures",
abstract = "GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. {\textcopyright} 2013",
author = "A.A. Pastor and U.V. Prokhorova and P.Y. Serdobintsev and V.V. Chaldyshev and M.A. Yagovkina",
year = "2013",
doi = "10.1134/S1063782613080150",
language = "English",
pages = "1137--1140",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

AU - Pastor, A.A.

AU - Prokhorova, U.V.

AU - Serdobintsev, P.Y.

AU - Chaldyshev, V.V.

AU - Yagovkina, M.A.

PY - 2013

Y1 - 2013

N2 - GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. © 2013

AB - GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. © 2013

U2 - 10.1134/S1063782613080150

DO - 10.1134/S1063782613080150

M3 - Article

SP - 1137

EP - 1140

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 7522910