TY - JOUR

T1 - Effect of annealing on microhardness and electrical resistivity of nanostructured SPD aluminium

AU - Mavlyutov, A. M.

AU - Bondarenko, A. S.

AU - Murashkin, M.Yu.

AU - Boltyniuk, E.V.

AU - Valiev, R. Z.

AU - Orlova, T. S.

N1 - Категории Scopus: Materials Chemistry, Mechanical Engineering, Mechanics of Materials, Metals and Alloys Категории Web of Science: Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

PY - 2017/3/25

Y1 - 2017/3/25

N2 - The influence of microstructure evolution on microhardness and electrical resistivity of ultrafine grained (UFG) commercial purity Al under annealing at different temperatures within a range of 363–673 K was studied. The initially coarse grained Al was processed by high pressure torsion (HPT) technique for the formation of UFG structure. The microstructure was characterized by electron backscattering diffraction and X-Ray diffraction. It was shown that annealing of UFG Al at temperatures within a range of 363–473 K leads to simultaneous increase of microhardness (by 6–13%) and electrical conductivity (by 4–8% at 300 K). The correlation between microstructural features and the resulting properties were analyzed. The average width s of potential barriers at grain boundaries (GBs) in HPT-processed Al was estimated in the frame of a tunnel model. The obtained large value of s compared with the GB crystallographic width is associated with elastically distorted lattice near GBs. The obtained results suggest a new way to increase simultaneously strength and electrical conductivity of UFG Al alloys by an appropriate annealing.

AB - The influence of microstructure evolution on microhardness and electrical resistivity of ultrafine grained (UFG) commercial purity Al under annealing at different temperatures within a range of 363–673 K was studied. The initially coarse grained Al was processed by high pressure torsion (HPT) technique for the formation of UFG structure. The microstructure was characterized by electron backscattering diffraction and X-Ray diffraction. It was shown that annealing of UFG Al at temperatures within a range of 363–473 K leads to simultaneous increase of microhardness (by 6–13%) and electrical conductivity (by 4–8% at 300 K). The correlation between microstructural features and the resulting properties were analyzed. The average width s of potential barriers at grain boundaries (GBs) in HPT-processed Al was estimated in the frame of a tunnel model. The obtained large value of s compared with the GB crystallographic width is associated with elastically distorted lattice near GBs. The obtained results suggest a new way to increase simultaneously strength and electrical conductivity of UFG Al alloys by an appropriate annealing.

KW - Metals and alloys

KW - Nanostructured materials

KW - Grain boundaries

KW - Electrical transport

KW - Mechanical properties

KW - Microstructure

KW - SEVERE PLASTIC-DEFORMATION

KW - MICROSTRUCTURE

KW - METALS

KW - Metals and alloys

KW - Nanostructured materials

KW - Grain boundaries

KW - Electrical transport

KW - Mechanical properties

KW - Microstructure

U2 - 10.1016/j.jallcom.2016.12.240

DO - 10.1016/j.jallcom.2016.12.240

M3 - статья

VL - 698

SP - 539

EP - 546

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -