TY - JOUR

T1 - Dielectric spectroscopy of chalcogenide glasses doped with transition metals

AU - Gutenev, M. S.

AU - Tver'yanovich, Yu S.

AU - Krasil'nikova, A. P.

AU - Kochemirovskii, V. A.

PY - 1989/11

Y1 - 1989/11

N2 - The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.

AB - The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.

UR - http://www.scopus.com/inward/record.url?scp=0024766331&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024766331

VL - 15

SP - 52

EP - 58

JO - Glass Physics and Chemistry

JF - Glass Physics and Chemistry

SN - 1087-6596

IS - 1

ER -