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DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions. / Timoshkin, Alexey Y.; Bettinger, Holger F.; Schaefer, Henry F.

в: Journal of Physical Chemistry A, Том 105, № 13, 2001, стр. 3240–3248.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Timoshkin, AY, Bettinger, HF & Schaefer, HF 2001, 'DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions', Journal of Physical Chemistry A, Том. 105, № 13, стр. 3240–3248. https://doi.org/10.1021/jp002379h

APA

Vancouver

Author

Timoshkin, Alexey Y. ; Bettinger, Holger F. ; Schaefer, Henry F. / DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions. в: Journal of Physical Chemistry A. 2001 ; Том 105, № 13. стр. 3240–3248.

BibTeX

@article{70ec08d92bb64bf39c712608009e5f3f,
title = "DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions",
author = "Timoshkin, {Alexey Y.} and Bettinger, {Holger F.} and Schaefer, {Henry F.}",
year = "2001",
doi = "10.1021/jp002379h",
language = "English",
volume = "105",
pages = "3240–3248",
journal = "Journal of Physical Chemistry B",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "13",

}

RIS

TY - JOUR

T1 - DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions

AU - Timoshkin, Alexey Y.

AU - Bettinger, Holger F.

AU - Schaefer, Henry F.

PY - 2001

Y1 - 2001

U2 - 10.1021/jp002379h

DO - 10.1021/jp002379h

M3 - Article

VL - 105

SP - 3240

EP - 3248

JO - Journal of Physical Chemistry B

JF - Journal of Physical Chemistry B

SN - 1520-6106

IS - 13

ER -

ID: 5115617