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Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO. / Комолов, Алексей Сергеевич; Lazneva, E.F.; Sobolev, V.S.; Pshenichnyuk, S.A.; Asfandiarov, N.L.; Zhizhin, E.V.; Pudikov, D.A.; Dubov, E.A.; Pronin, I.A.; Akbarova, F.Dj.; Sharopov, U.B.

в: Crystallography Reports, Том 69, № 1, 01.02.2024, стр. 109-113.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Комолов, АС, Lazneva, EF, Sobolev, VS, Pshenichnyuk, SA, Asfandiarov, NL, Zhizhin, EV, Pudikov, DA, Dubov, EA, Pronin, IA, Akbarova, FD & Sharopov, UB 2024, 'Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO', Crystallography Reports, Том. 69, № 1, стр. 109-113. https://doi.org/10.1134/s1063774523601223

APA

Комолов, А. С., Lazneva, E. F., Sobolev, V. S., Pshenichnyuk, S. A., Asfandiarov, N. L., Zhizhin, E. V., Pudikov, D. A., Dubov, E. A., Pronin, I. A., Akbarova, F. D., & Sharopov, U. B. (2024). Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO. Crystallography Reports, 69(1), 109-113. https://doi.org/10.1134/s1063774523601223

Vancouver

Author

Комолов, Алексей Сергеевич ; Lazneva, E.F. ; Sobolev, V.S. ; Pshenichnyuk, S.A. ; Asfandiarov, N.L. ; Zhizhin, E.V. ; Pudikov, D.A. ; Dubov, E.A. ; Pronin, I.A. ; Akbarova, F.Dj. ; Sharopov, U.B. / Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO. в: Crystallography Reports. 2024 ; Том 69, № 1. стр. 109-113.

BibTeX

@article{f896192e82a34fa28fe97ee2410ee863,
title = "Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO",
abstract = "The surface topography and density of unoccupied electronic states at thermal deposition of ultra-thin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics ofunoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have beeninvestigated by total current spectroscopy using a probe electron beam. The experimental dependences havebeen analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by themethod of density functional theory (DFT).",
author = "Комолов, {Алексей Сергеевич} and E.F. Lazneva and V.S. Sobolev and S.A. Pshenichnyuk and N.L. Asfandiarov and E.V. Zhizhin and D.A. Pudikov and E.A. Dubov and I.A. Pronin and F.Dj. Akbarova and U.B. Sharopov",
year = "2024",
month = feb,
day = "1",
doi = "10.1134/s1063774523601223",
language = "English",
volume = "69",
pages = "109--113",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO

AU - Комолов, Алексей Сергеевич

AU - Lazneva, E.F.

AU - Sobolev, V.S.

AU - Pshenichnyuk, S.A.

AU - Asfandiarov, N.L.

AU - Zhizhin, E.V.

AU - Pudikov, D.A.

AU - Dubov, E.A.

AU - Pronin, I.A.

AU - Akbarova, F.Dj.

AU - Sharopov, U.B.

PY - 2024/2/1

Y1 - 2024/2/1

N2 - The surface topography and density of unoccupied electronic states at thermal deposition of ultra-thin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics ofunoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have beeninvestigated by total current spectroscopy using a probe electron beam. The experimental dependences havebeen analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by themethod of density functional theory (DFT).

AB - The surface topography and density of unoccupied electronic states at thermal deposition of ultra-thin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics ofunoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have beeninvestigated by total current spectroscopy using a probe electron beam. The experimental dependences havebeen analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by themethod of density functional theory (DFT).

UR - https://www.mendeley.com/catalogue/750038ee-1f37-3110-b09e-d433e91119ab/

U2 - 10.1134/s1063774523601223

DO - 10.1134/s1063774523601223

M3 - Article

VL - 69

SP - 109

EP - 113

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -

ID: 118285601