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Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy. / Preobrajenski, A. B.; Vinogradov, A. S.; Mårtensson, N.

в: Journal of Electron Spectroscopy and Related Phenomena, Том 148, № 1, 01.07.2005, стр. 59-64.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Preobrajenski, AB, Vinogradov, AS & Mårtensson, N 2005, 'Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy', Journal of Electron Spectroscopy and Related Phenomena, Том. 148, № 1, стр. 59-64. https://doi.org/10.1016/j.elspec.2005.02.005

APA

Preobrajenski, A. B., Vinogradov, A. S., & Mårtensson, N. (2005). Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy. Journal of Electron Spectroscopy and Related Phenomena, 148(1), 59-64. https://doi.org/10.1016/j.elspec.2005.02.005

Vancouver

Preobrajenski AB, Vinogradov AS, Mårtensson N. Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy. Journal of Electron Spectroscopy and Related Phenomena. 2005 Июль 1;148(1):59-64. https://doi.org/10.1016/j.elspec.2005.02.005

Author

Preobrajenski, A. B. ; Vinogradov, A. S. ; Mårtensson, N. / Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy. в: Journal of Electron Spectroscopy and Related Phenomena. 2005 ; Том 148, № 1. стр. 59-64.

BibTeX

@article{a36a76c0c0b144d182439fda63c194ce,
title = "Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy",
abstract = "Non-radiative decay of core excitations at the B 1s and N 1s absorption edges of bulk hexagonal boron nitride (h-BN) has been studied with resonant Auger spectroscopy. In order to reproduce the bulk properties of the sample while keeping it electrically conducting, we have grown reasonably thick (more than 20 nm) polycrystalline films of h-BN on a Ni(1 1 1) surface by thermal cracking of borazine vapor. The probability of the participator Auger process in the non-radiative decay of the B 1s-1π* and N 1s -1π* excitations has been found to be very high (31%) and rather low (below 0.5%), respectively. The drastic difference between the participator Auger decay probabilities of these two excitations has been explained in terms of different localization of the electrons promoted into the lowest unoccupied π* state on the cationic (B) and anionic (N) sites. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",
keywords = "Boron nitride, NEXAFS, Photoelectron spectroscopy, Resonant Auger spectroscopy",
author = "Preobrajenski, {A. B.} and Vinogradov, {A. S.} and N. M{\aa}rtensson",
year = "2005",
month = jul,
day = "1",
doi = "10.1016/j.elspec.2005.02.005",
language = "English",
volume = "148",
pages = "59--64",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
issn = "0368-2048",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy

AU - Preobrajenski, A. B.

AU - Vinogradov, A. S.

AU - Mårtensson, N.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Non-radiative decay of core excitations at the B 1s and N 1s absorption edges of bulk hexagonal boron nitride (h-BN) has been studied with resonant Auger spectroscopy. In order to reproduce the bulk properties of the sample while keeping it electrically conducting, we have grown reasonably thick (more than 20 nm) polycrystalline films of h-BN on a Ni(1 1 1) surface by thermal cracking of borazine vapor. The probability of the participator Auger process in the non-radiative decay of the B 1s-1π* and N 1s -1π* excitations has been found to be very high (31%) and rather low (below 0.5%), respectively. The drastic difference between the participator Auger decay probabilities of these two excitations has been explained in terms of different localization of the electrons promoted into the lowest unoccupied π* state on the cationic (B) and anionic (N) sites. © 2005 Elsevier B.V. All rights reserved.

AB - Non-radiative decay of core excitations at the B 1s and N 1s absorption edges of bulk hexagonal boron nitride (h-BN) has been studied with resonant Auger spectroscopy. In order to reproduce the bulk properties of the sample while keeping it electrically conducting, we have grown reasonably thick (more than 20 nm) polycrystalline films of h-BN on a Ni(1 1 1) surface by thermal cracking of borazine vapor. The probability of the participator Auger process in the non-radiative decay of the B 1s-1π* and N 1s -1π* excitations has been found to be very high (31%) and rather low (below 0.5%), respectively. The drastic difference between the participator Auger decay probabilities of these two excitations has been explained in terms of different localization of the electrons promoted into the lowest unoccupied π* state on the cationic (B) and anionic (N) sites. © 2005 Elsevier B.V. All rights reserved.

KW - Boron nitride

KW - NEXAFS

KW - Photoelectron spectroscopy

KW - Resonant Auger spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=18544390831&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2005.02.005

DO - 10.1016/j.elspec.2005.02.005

M3 - Article

AN - SCOPUS:18544390831

VL - 148

SP - 59

EP - 64

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048

IS - 1

ER -

ID: 127648166