Standard

CVD of group 13-15 binary materials : Importance of the association reactions in the gas phase. / Timoshkin, AY.

FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV. ред. / MT Swihart; MD Allendorf; M Meyyappan. The Electrochemical Society, 2001. стр. 25-32 (Electrochemical Society Series; Том 2001).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Timoshkin, AY 2001, CVD of group 13-15 binary materials: Importance of the association reactions in the gas phase. в MT Swihart, MD Allendorf & M Meyyappan (ред.), FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV. Electrochemical Society Series, Том. 2001, The Electrochemical Society, стр. 25-32, 2nd International Symposium on Fundamental Gas-Phase and Surface Chem of Vapor-Phase Deposition/4th Symp on Process Control, Diagnost and Modeling in Semiconductor Mfg, WASHINGTON, 26/03/01.

APA

Timoshkin, AY. (2001). CVD of group 13-15 binary materials: Importance of the association reactions in the gas phase. в MT. Swihart, MD. Allendorf, & M. Meyyappan (Ред.), FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV (стр. 25-32). (Electrochemical Society Series; Том 2001). The Electrochemical Society.

Vancouver

Timoshkin AY. CVD of group 13-15 binary materials: Importance of the association reactions in the gas phase. в Swihart MT, Allendorf MD, Meyyappan M, Редакторы, FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV. The Electrochemical Society. 2001. стр. 25-32. (Electrochemical Society Series).

Author

Timoshkin, AY. / CVD of group 13-15 binary materials : Importance of the association reactions in the gas phase. FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV. Редактор / MT Swihart ; MD Allendorf ; M Meyyappan. The Electrochemical Society, 2001. стр. 25-32 (Electrochemical Society Series).

BibTeX

@inproceedings{3d2aaf7e52714c5cbf064fb1538bdca3,
title = "CVD of group 13-15 binary materials: Importance of the association reactions in the gas phase",
abstract = "Geometries, vibrational frequencies and thermodynamic properties of trimeric rings [XMYH](3) and tetrameric clusters [XMYH](4), X=H,F,Cl,Br,l; M=Al,Ga,In; Y=N,P,As have been obtained at B3LY-P/LAN-L2DZP level of theory. Thermodynamic analysis of the oligomerization reactions shows that formation of cluster species in the gas phase is thermodynamically favorable in case of X=H. Furthermore, gas-phase generation of hexamer species [HMYH](6) should also be viable. Nitrogen-containing oligomers are highly stable in respect to dissociation, which makes them promising candidates for the stoichiometry controlled CVD of doped nitrides.",
keywords = "CHEMICAL-VAPOR-DEPOSITION, SURFACE-CHEMISTRY, STABILITIES, AROMATICITY, ENERGETICS, ATOMS, AL",
author = "AY Timoshkin",
year = "2001",
language = "Английский",
isbn = "1-56677-319-9",
series = "Electrochemical Society Series",
publisher = "The Electrochemical Society",
pages = "25--32",
editor = "MT Swihart and MD Allendorf and M Meyyappan",
booktitle = "FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV",
address = "Соединенные Штаты Америки",
note = "null ; Conference date: 26-03-2001",

}

RIS

TY - GEN

T1 - CVD of group 13-15 binary materials

AU - Timoshkin, AY

PY - 2001

Y1 - 2001

N2 - Geometries, vibrational frequencies and thermodynamic properties of trimeric rings [XMYH](3) and tetrameric clusters [XMYH](4), X=H,F,Cl,Br,l; M=Al,Ga,In; Y=N,P,As have been obtained at B3LY-P/LAN-L2DZP level of theory. Thermodynamic analysis of the oligomerization reactions shows that formation of cluster species in the gas phase is thermodynamically favorable in case of X=H. Furthermore, gas-phase generation of hexamer species [HMYH](6) should also be viable. Nitrogen-containing oligomers are highly stable in respect to dissociation, which makes them promising candidates for the stoichiometry controlled CVD of doped nitrides.

AB - Geometries, vibrational frequencies and thermodynamic properties of trimeric rings [XMYH](3) and tetrameric clusters [XMYH](4), X=H,F,Cl,Br,l; M=Al,Ga,In; Y=N,P,As have been obtained at B3LY-P/LAN-L2DZP level of theory. Thermodynamic analysis of the oligomerization reactions shows that formation of cluster species in the gas phase is thermodynamically favorable in case of X=H. Furthermore, gas-phase generation of hexamer species [HMYH](6) should also be viable. Nitrogen-containing oligomers are highly stable in respect to dissociation, which makes them promising candidates for the stoichiometry controlled CVD of doped nitrides.

KW - CHEMICAL-VAPOR-DEPOSITION

KW - SURFACE-CHEMISTRY

KW - STABILITIES

KW - AROMATICITY

KW - ENERGETICS

KW - ATOMS

KW - AL

M3 - статья в сборнике материалов конференции

SN - 1-56677-319-9

T3 - Electrochemical Society Series

SP - 25

EP - 32

BT - FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV

A2 - Swihart, MT

A2 - Allendorf, MD

A2 - Meyyappan, M

PB - The Electrochemical Society

Y2 - 26 March 2001

ER -

ID: 85941759