TY - GEN

T1 - CVD of A(III)B(v)

AU - Timoshkin, AY

PY - 2000

Y1 - 2000

N2 - Density functional theory in form of B3LYP functional has been employed to predict structural, spectral, and thermodynamic characteristics of single-source precursors R3MYH3 and resulting intermediates in the processes of Chemical Vapor Deposition of A(m)B(v). Donor-acceptor bond strength in the source precursor may be used as a criterion to distinguish between two principal CVD mechanisms. Radical reactions dominate in case of precursors with weak donor-acceptor bond (less than or equal to 50 kJ mol(-1)), while for strongly bonded species (greater than or equal to 80 kJ mol(.1)) association processes are essential under low temperature-high pressure conditions (including laser-assisted CVD). Preserving of the metal-nitrogen bond in the gas phase during CVD process (800-1000K) opens the perspective of design of the novel single-source precursors (ring and cluster compounds) for the stoichiometry controlled CVD of nitrides, doped by the rare-earth elements. A mechanism of the carbon contamination of the nitrides with high temperature formation of M, N, C-containing ring intermediates is also suggested and discussed.

AB - Density functional theory in form of B3LYP functional has been employed to predict structural, spectral, and thermodynamic characteristics of single-source precursors R3MYH3 and resulting intermediates in the processes of Chemical Vapor Deposition of A(m)B(v). Donor-acceptor bond strength in the source precursor may be used as a criterion to distinguish between two principal CVD mechanisms. Radical reactions dominate in case of precursors with weak donor-acceptor bond (less than or equal to 50 kJ mol(-1)), while for strongly bonded species (greater than or equal to 80 kJ mol(.1)) association processes are essential under low temperature-high pressure conditions (including laser-assisted CVD). Preserving of the metal-nitrogen bond in the gas phase during CVD process (800-1000K) opens the perspective of design of the novel single-source precursors (ring and cluster compounds) for the stoichiometry controlled CVD of nitrides, doped by the rare-earth elements. A mechanism of the carbon contamination of the nitrides with high temperature formation of M, N, C-containing ring intermediates is also suggested and discussed.

KW - CHEMICAL-VAPOR-DEPOSITION

KW - ALUMINUM NITRIDE

KW - TRIMETHYLGALLIUM

KW - AMMONIA

M3 - статья в сборнике материалов конференции

SN - 3-89336-277-0

T3 - SCHRIFTEN DES FORSCHUNGSZENTRUMS JULICH REIHE ENERGIETECHNIK

SP - 653

EP - 656

BT - HIGH TEMPERATURE MATERIALS CHEMISTRY

A2 - Hilpert, K

A2 - Froben, FW

A2 - Singheiser, L

Y2 - 10 April 2000 through 14 April 2000

ER -