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Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate. / Grigor'ev, L. V.; Mikhaǐlov, A. V.

в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том 83, № 3, 01.03.2016, стр. 189-192.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Grigor'ev, LV & Mikhaǐlov, AV 2016, 'Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate', Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том. 83, № 3, стр. 189-192. https://doi.org/10.1364/JOT.83.000189

APA

Vancouver

Grigor'ev LV, Mikhaǐlov AV. Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate. Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2016 Март 1;83(3):189-192. https://doi.org/10.1364/JOT.83.000189

Author

Grigor'ev, L. V. ; Mikhaǐlov, A. V. / Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate. в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2016 ; Том 83, № 3. стр. 189-192.

BibTeX

@article{7125c4321a144eeba456093b18fbbab0,
title = "Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate",
abstract = "A new method is presented for creating a silicon nanocomposite that contains bismuth silicate. The results are shown of a study of the structural, optical, and electrophysical properties of a thin layer of oxidized porous silicon that contains bismuth silicate. X-ray structural studies showed that a bismuth silicate phase is present in this layer. The absorption coefficient of the layer in the wavelength range from 400 to 900 nm was no greater than 70 cm-1. This makes it possible to use it to create optical sensors of the integrated-optics type and in microstructures of silicon photonics. Thermal-Activation studies of the composite in the temperature range from 100 to 600 K made it possible to reconstruct the energy distribution function of traps over the activation energy, needed for predicting its optical properties.",
author = "Grigor'ev, {L. V.} and Mikhaǐlov, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2016 Optical Society of America.",
year = "2016",
month = mar,
day = "1",
doi = "10.1364/JOT.83.000189",
language = "English",
volume = "83",
pages = "189--192",
journal = "Journal of Optical Technology (A Translation of Opticheskii Zhurnal)",
issn = "1070-9762",
publisher = "The Optical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Creating and investigating the optical and electrophysical properties of a silicon nanocomposite that contains bismuth silicate

AU - Grigor'ev, L. V.

AU - Mikhaǐlov, A. V.

N1 - Publisher Copyright: © 2016 Optical Society of America.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - A new method is presented for creating a silicon nanocomposite that contains bismuth silicate. The results are shown of a study of the structural, optical, and electrophysical properties of a thin layer of oxidized porous silicon that contains bismuth silicate. X-ray structural studies showed that a bismuth silicate phase is present in this layer. The absorption coefficient of the layer in the wavelength range from 400 to 900 nm was no greater than 70 cm-1. This makes it possible to use it to create optical sensors of the integrated-optics type and in microstructures of silicon photonics. Thermal-Activation studies of the composite in the temperature range from 100 to 600 K made it possible to reconstruct the energy distribution function of traps over the activation energy, needed for predicting its optical properties.

AB - A new method is presented for creating a silicon nanocomposite that contains bismuth silicate. The results are shown of a study of the structural, optical, and electrophysical properties of a thin layer of oxidized porous silicon that contains bismuth silicate. X-ray structural studies showed that a bismuth silicate phase is present in this layer. The absorption coefficient of the layer in the wavelength range from 400 to 900 nm was no greater than 70 cm-1. This makes it possible to use it to create optical sensors of the integrated-optics type and in microstructures of silicon photonics. Thermal-Activation studies of the composite in the temperature range from 100 to 600 K made it possible to reconstruct the energy distribution function of traps over the activation energy, needed for predicting its optical properties.

UR - http://www.scopus.com/inward/record.url?scp=84980385827&partnerID=8YFLogxK

U2 - 10.1364/JOT.83.000189

DO - 10.1364/JOT.83.000189

M3 - Article

AN - SCOPUS:84980385827

VL - 83

SP - 189

EP - 192

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 3

ER -

ID: 86117088