We have developed corundum-like Cr2O3 / α-Al2O3 heterostructures using a novel mist-CVD technique, varying
the growth parameters to modify the morphology and crystallinity of the Cr2O3 films. This technique is
considered as an alternative to conventional radio-frequency (RF) magnetron sputtering, which requires a
subsequent annealing due to low crystal perfection of the sputtered films. Layers deposited by both techniques
are analyzed. The highest crystallinity among magnetron sputtered films was achieved in case of 3-hour
annealing at 350 ◦C, however, any of the films grown by mist-CVD possess the mosaic spread with less-
misoriented blocks. Moreover, the mist-CVD films own a much more developed morphology with a substruc
ture of specifically oriented crystallites, that can be modified directly during a growth process. It has been shown
that the growth rates of Cr2O3 films by chemical vapor deposition are significantly higher than in the case of
sputtering. Thereby, Cr2O3 / α-Al2O3 heterostructures grown by mist-CVD technique may have applications as
functional semiconductor surfaces.