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Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells. / Loginov, D.K.; Ubyivovk, E.V.; Ignatiev, I.V.

Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014). 2014. стр. 113-114.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная

Harvard

Loginov, DK, Ubyivovk, EV & Ignatiev, IV 2014, Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells. в Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014). стр. 113-114.

APA

Loginov, D. K., Ubyivovk, E. V., & Ignatiev, I. V. (2014). Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells. в Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014) (стр. 113-114)

Vancouver

Loginov DK, Ubyivovk EV, Ignatiev IV. Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells. в Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014). 2014. стр. 113-114

Author

Loginov, D.K. ; Ubyivovk, E.V. ; Ignatiev, I.V. / Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells. Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014). 2014. стр. 113-114

BibTeX

@inproceedings{400ce3810833497e8a37fd2d98125da6,
title = "Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells",
abstract = "Reectanse spectra of a nanostructure with the 200-nm GaAs quantum well are experimentally studied at application of the uniaxial pressure along the structure layers. A theory of the stress-indused convergence of heavy-hole and light-hole exciton masses is developed. The model is applied to calculation of the polaritonic spectra of nanostructures containing thick GaAs/AlGaAs quantum well. The modication of reectance spectra of the quantum well related to the mass convergence eect is discussed and compared to the experimentally observed one.",
author = "D.K. Loginov and E.V. Ubyivovk and I.V. Ignatiev",
year = "2014",
language = "English",
isbn = "978-5-906433-09-1",
pages = "113--114",
booktitle = "Proceedings of 22nd International Symposium {"}NANOSTRUCTURES: Physics and Technology{"} (SPb, 2014)",

}

RIS

TY - GEN

T1 - Convergence of heavy-hole and light-hole exciton masses in uniaxially stressed GaAs/AlGaAs quantum wells

AU - Loginov, D.K.

AU - Ubyivovk, E.V.

AU - Ignatiev, I.V.

PY - 2014

Y1 - 2014

N2 - Reectanse spectra of a nanostructure with the 200-nm GaAs quantum well are experimentally studied at application of the uniaxial pressure along the structure layers. A theory of the stress-indused convergence of heavy-hole and light-hole exciton masses is developed. The model is applied to calculation of the polaritonic spectra of nanostructures containing thick GaAs/AlGaAs quantum well. The modication of reectance spectra of the quantum well related to the mass convergence eect is discussed and compared to the experimentally observed one.

AB - Reectanse spectra of a nanostructure with the 200-nm GaAs quantum well are experimentally studied at application of the uniaxial pressure along the structure layers. A theory of the stress-indused convergence of heavy-hole and light-hole exciton masses is developed. The model is applied to calculation of the polaritonic spectra of nanostructures containing thick GaAs/AlGaAs quantum well. The modication of reectance spectra of the quantum well related to the mass convergence eect is discussed and compared to the experimentally observed one.

UR - https://www.elibrary.ru/item.asp?id=22520005

M3 - Conference contribution

SN - 978-5-906433-09-1

SP - 113

EP - 114

BT - Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014)

ER -

ID: 4682860