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Controlling graphite oxide bandgap width by reduction in hydrogen. / Mikoushkin, V. M.; Shnitov, V. V.; Nikonov, S. Yu; Dideykin, A. T.; Vul', S. P.; Vul', A. Ya; Sakseev, D. A.; Vyalikh, D. V.; Vilkov, O. Yu.

в: Technical Physics Letters, Том 37, № 10, 10.2011, стр. 942-945.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Mikoushkin, VM, Shnitov, VV, Nikonov, SY, Dideykin, AT, Vul', SP, Vul', AY, Sakseev, DA, Vyalikh, DV & Vilkov, OY 2011, 'Controlling graphite oxide bandgap width by reduction in hydrogen', Technical Physics Letters, Том. 37, № 10, стр. 942-945. https://doi.org/10.1134/S1063785011100257

APA

Mikoushkin, V. M., Shnitov, V. V., Nikonov, S. Y., Dideykin, A. T., Vul', S. P., Vul', A. Y., Sakseev, D. A., Vyalikh, D. V., & Vilkov, O. Y. (2011). Controlling graphite oxide bandgap width by reduction in hydrogen. Technical Physics Letters, 37(10), 942-945. https://doi.org/10.1134/S1063785011100257

Vancouver

Mikoushkin VM, Shnitov VV, Nikonov SY, Dideykin AT, Vul' SP, Vul' AY и пр. Controlling graphite oxide bandgap width by reduction in hydrogen. Technical Physics Letters. 2011 Окт.;37(10):942-945. https://doi.org/10.1134/S1063785011100257

Author

Mikoushkin, V. M. ; Shnitov, V. V. ; Nikonov, S. Yu ; Dideykin, A. T. ; Vul', S. P. ; Vul', A. Ya ; Sakseev, D. A. ; Vyalikh, D. V. ; Vilkov, O. Yu. / Controlling graphite oxide bandgap width by reduction in hydrogen. в: Technical Physics Letters. 2011 ; Том 37, № 10. стр. 942-945.

BibTeX

@article{43cccd2ba876408a93897eed78abcef3,
title = "Controlling graphite oxide bandgap width by reduction in hydrogen",
abstract = "Transformation of the chemical composition and electron structure of graphite oxide (GO) nanolayers as a result of their annealing in hydrogen has been studied by X-ray photoelectron spectroscopy using synchrotron radiation. It is established that both the chemical composition and bandgap width of GO can be controlled by varying the temperature and duration of heat treatment. By this means, the properties of GO nanolayers can be smoothly changed from dielectric to semiconductor.",
author = "Mikoushkin, {V. M.} and Shnitov, {V. V.} and Nikonov, {S. Yu} and Dideykin, {A. T.} and Vul', {S. P.} and Vul', {A. Ya} and Sakseev, {D. A.} and Vyalikh, {D. V.} and Vilkov, {O. Yu}",
year = "2011",
month = oct,
doi = "10.1134/S1063785011100257",
language = "English",
volume = "37",
pages = "942--945",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Controlling graphite oxide bandgap width by reduction in hydrogen

AU - Mikoushkin, V. M.

AU - Shnitov, V. V.

AU - Nikonov, S. Yu

AU - Dideykin, A. T.

AU - Vul', S. P.

AU - Vul', A. Ya

AU - Sakseev, D. A.

AU - Vyalikh, D. V.

AU - Vilkov, O. Yu

PY - 2011/10

Y1 - 2011/10

N2 - Transformation of the chemical composition and electron structure of graphite oxide (GO) nanolayers as a result of their annealing in hydrogen has been studied by X-ray photoelectron spectroscopy using synchrotron radiation. It is established that both the chemical composition and bandgap width of GO can be controlled by varying the temperature and duration of heat treatment. By this means, the properties of GO nanolayers can be smoothly changed from dielectric to semiconductor.

AB - Transformation of the chemical composition and electron structure of graphite oxide (GO) nanolayers as a result of their annealing in hydrogen has been studied by X-ray photoelectron spectroscopy using synchrotron radiation. It is established that both the chemical composition and bandgap width of GO can be controlled by varying the temperature and duration of heat treatment. By this means, the properties of GO nanolayers can be smoothly changed from dielectric to semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=80155151658&partnerID=8YFLogxK

U2 - 10.1134/S1063785011100257

DO - 10.1134/S1063785011100257

M3 - Article

AN - SCOPUS:80155151658

VL - 37

SP - 942

EP - 945

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 10

ER -

ID: 35363802