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Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. / Romaka, V. A.; Fruchart, D.; Stadnyk, Yu V.; Tobola, J.; Gorelenko, Yu K.; Shelyapina, M. G.; Romaka, L. P.; Chekurin, V. F.

в: Semiconductors, Том 40, № 11, 11.2006, стр. 1275-1281.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Romaka, VA, Fruchart, D, Stadnyk, YV, Tobola, J, Gorelenko, YK, Shelyapina, MG, Romaka, LP & Chekurin, VF 2006, 'Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type', Semiconductors, Том. 40, № 11, стр. 1275-1281. https://doi.org/10.1134/S1063782606110054

APA

Romaka, V. A., Fruchart, D., Stadnyk, Y. V., Tobola, J., Gorelenko, Y. K., Shelyapina, M. G., Romaka, L. P., & Chekurin, V. F. (2006). Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. Semiconductors, 40(11), 1275-1281. https://doi.org/10.1134/S1063782606110054

Vancouver

Romaka VA, Fruchart D, Stadnyk YV, Tobola J, Gorelenko YK, Shelyapina MG и пр. Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. Semiconductors. 2006 Нояб.;40(11):1275-1281. https://doi.org/10.1134/S1063782606110054

Author

Romaka, V. A. ; Fruchart, D. ; Stadnyk, Yu V. ; Tobola, J. ; Gorelenko, Yu K. ; Shelyapina, M. G. ; Romaka, L. P. ; Chekurin, V. F. / Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. в: Semiconductors. 2006 ; Том 40, № 11. стр. 1275-1281.

BibTeX

@article{a859f97f67b349ecbb3e78ce5f616e92,
title = "Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type",
abstract = "A condition for attaining the maximum values of thermoelectric power Z*in intermetallic semiconductors of the MgAgAs structural type consists in heavy doping of these semiconductors with donor and/or acceptor impurities with concentrations at which the Fermi level is pinned at the mobility threshold for the corresponding band of continuous energies. The maximum of the thermoelectric power is thermally stable under the condition that the impurity type and the type of the impurity band that give rise to the maximum in Z* are the same.",
author = "Romaka, {V. A.} and D. Fruchart and Stadnyk, {Yu V.} and J. Tobola and Gorelenko, {Yu K.} and Shelyapina, {M. G.} and Romaka, {L. P.} and Chekurin, {V. F.}",
year = "2006",
month = nov,
doi = "10.1134/S1063782606110054",
language = "English",
volume = "40",
pages = "1275--1281",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type

AU - Romaka, V. A.

AU - Fruchart, D.

AU - Stadnyk, Yu V.

AU - Tobola, J.

AU - Gorelenko, Yu K.

AU - Shelyapina, M. G.

AU - Romaka, L. P.

AU - Chekurin, V. F.

PY - 2006/11

Y1 - 2006/11

N2 - A condition for attaining the maximum values of thermoelectric power Z*in intermetallic semiconductors of the MgAgAs structural type consists in heavy doping of these semiconductors with donor and/or acceptor impurities with concentrations at which the Fermi level is pinned at the mobility threshold for the corresponding band of continuous energies. The maximum of the thermoelectric power is thermally stable under the condition that the impurity type and the type of the impurity band that give rise to the maximum in Z* are the same.

AB - A condition for attaining the maximum values of thermoelectric power Z*in intermetallic semiconductors of the MgAgAs structural type consists in heavy doping of these semiconductors with donor and/or acceptor impurities with concentrations at which the Fermi level is pinned at the mobility threshold for the corresponding band of continuous energies. The maximum of the thermoelectric power is thermally stable under the condition that the impurity type and the type of the impurity band that give rise to the maximum in Z* are the same.

UR - http://www.scopus.com/inward/record.url?scp=33750294825&partnerID=8YFLogxK

U2 - 10.1134/S1063782606110054

DO - 10.1134/S1063782606110054

M3 - Article

AN - SCOPUS:33750294825

VL - 40

SP - 1275

EP - 1281

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 16796979