Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Comprehensive study of the interstitial hydrogen donor in SnO2. / Herklotz, F; Lavrov, E; Мельников, В; Galazka, Z; Агекян, Вадим Фадеевич.
в: Physical Review B-Condensed Matter, Том 108, № 20, 205204, 28.11.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Comprehensive study of the interstitial hydrogen donor in SnO2
AU - Herklotz, F
AU - Lavrov, E
AU - Мельников, В
AU - Galazka, Z
AU - Агекян, Вадим Фадеевич
PY - 2023/11/28
Y1 - 2023/11/28
N2 - The nature of interstitial hydrogen in SnO2 has been inferred by a combined study of first-principles theory and infrared absorption, near band edge absorption, and photoluminescence spectroscopy. The earlier interpretationof a center with an O–H stretch mode at 3156 cm−1 as interstitial hydrogen is confirmed. Uniaxial stress experiments on the 3156 cm−1 mode reveal that the interstitial hydrogen atom is located in the open c channel of the rutile SnO2 structure. Migration along the c axis of the crystals occurs via low barrier hydrogen jumps of around 0.57 eV to symmetrically equivalent nearest-neighbor positions. Combinational vibrations of the O–H stretch mode with the out-of-ab-plane and in-ab-plane wag modes at about 4014 and 4332 cm−1 have beenidentified. Free carrier absorption and excitonic properties of the defect demonstrate that Hi forms an effective shallow-donor-like state similar to the well-characterized F, Cl, and Sb n-type dopants in this material.
AB - The nature of interstitial hydrogen in SnO2 has been inferred by a combined study of first-principles theory and infrared absorption, near band edge absorption, and photoluminescence spectroscopy. The earlier interpretationof a center with an O–H stretch mode at 3156 cm−1 as interstitial hydrogen is confirmed. Uniaxial stress experiments on the 3156 cm−1 mode reveal that the interstitial hydrogen atom is located in the open c channel of the rutile SnO2 structure. Migration along the c axis of the crystals occurs via low barrier hydrogen jumps of around 0.57 eV to symmetrically equivalent nearest-neighbor positions. Combinational vibrations of the O–H stretch mode with the out-of-ab-plane and in-ab-plane wag modes at about 4014 and 4332 cm−1 have beenidentified. Free carrier absorption and excitonic properties of the defect demonstrate that Hi forms an effective shallow-donor-like state similar to the well-characterized F, Cl, and Sb n-type dopants in this material.
UR - https://www.mendeley.com/catalogue/4044cf96-ec2d-35cd-b417-d451de7231d9/
U2 - 10.1103/physrevb.108.205204
DO - 10.1103/physrevb.108.205204
M3 - Article
VL - 108
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 20
M1 - 205204
ER -
ID: 114496928