TY - JOUR

T1 - Composition-dependent conductivity of In x Ga 1-x As nanowires

AU - Sharov, V.

AU - Alekseev, P.

AU - Dunaevskiy, M.

AU - Reznik, R.

AU - Cirlin, G.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018

Y1 - 2018

N2 - Using the methods of scanning probe microscopy, I-V characteristics of individual In x Ga 1-x As nanowires with different In content (x) were measured. A sharp decrease in the conductivity was observed at x=0.7. It is shown that type of contact between nanowire and probe changes from ohmic at x=1 to Schottky at x=0.85. These changes were explained by the formation of surface conductive channel, induced by surface Fermi level pinning in conduction band for x>0.85.

AB - Using the methods of scanning probe microscopy, I-V characteristics of individual In x Ga 1-x As nanowires with different In content (x) were measured. A sharp decrease in the conductivity was observed at x=0.7. It is shown that type of contact between nanowire and probe changes from ohmic at x=1 to Schottky at x=0.85. These changes were explained by the formation of surface conductive channel, induced by surface Fermi level pinning in conduction band for x>0.85.

UR - http://www.scopus.com/inward/record.url?scp=85061006940&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1124/8/081023

DO - 10.1088/1742-6596/1124/8/081023

M3 - Conference article

AN - SCOPUS:85061006940

VL - 1124

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 8

M1 - 081023

T2 - 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018

Y2 - 2 April 2018 through 5 April 2018

ER -