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Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface. / Valisheva, N.A.; Tereshchenko, O.E.; Prosvirin, I.P.; Levtsova, T.A.; Rodjakina, E.E.; Kovchavcev, A.V.

в: Applied Surface Science, Том 256, № 19, 2010, стр. 5722-5726.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Valisheva, NA, Tereshchenko, OE, Prosvirin, IP, Levtsova, TA, Rodjakina, EE & Kovchavcev, AV 2010, 'Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface', Applied Surface Science, Том. 256, № 19, стр. 5722-5726.

APA

Valisheva, N. A., Tereshchenko, O. E., Prosvirin, I. P., Levtsova, T. A., Rodjakina, E. E., & Kovchavcev, A. V. (2010). Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface. Applied Surface Science, 256(19), 5722-5726.

Vancouver

Valisheva NA, Tereshchenko OE, Prosvirin IP, Levtsova TA, Rodjakina EE, Kovchavcev AV. Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface. Applied Surface Science. 2010;256(19):5722-5726.

Author

Valisheva, N.A. ; Tereshchenko, O.E. ; Prosvirin, I.P. ; Levtsova, T.A. ; Rodjakina, E.E. ; Kovchavcev, A.V. / Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface. в: Applied Surface Science. 2010 ; Том 256, № 19. стр. 5722-5726.

BibTeX

@article{af77e39369ed44fa9aaf2b0cc51cfa74,
title = "Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface",
abstract = "The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",
author = "N.A. Valisheva and O.E. Tereshchenko and I.P. Prosvirin and T.A. Levtsova and E.E. Rodjakina and A.V. Kovchavcev",
year = "2010",
language = "не определен",
volume = "256",
pages = "5722--5726",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "19",

}

RIS

TY - JOUR

T1 - Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface

AU - Valisheva, N.A.

AU - Tereshchenko, O.E.

AU - Prosvirin, I.P.

AU - Levtsova, T.A.

AU - Rodjakina, E.E.

AU - Kovchavcev, A.V.

PY - 2010

Y1 - 2010

N2 - The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface. © 2010 Elsevier B.V. All rights reserved.

AB - The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface. © 2010 Elsevier B.V. All rights reserved.

M3 - статья

VL - 256

SP - 5722

EP - 5726

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -

ID: 5537619