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Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films. / Kumar, N.; Ищенко, Д.В.; Милехин, И. А.; Кырова, Е. Д.; Федосенко, Е. В.; Милехин, А. Г.; Терещенко, Олег Евгеньевич.

в: Journal of Raman Spectroscopy, Том 56, № 5, 01.05.2025, стр. 409-419.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kumar, N, Ищенко, ДВ, Милехин, ИА, Кырова, ЕД, Федосенко, ЕВ, Милехин, АГ & Терещенко, ОЕ 2025, 'Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films', Journal of Raman Spectroscopy, Том. 56, № 5, стр. 409-419. https://doi.org/10.1002/jrs.6779

APA

Kumar, N., Ищенко, Д. В., Милехин, И. А., Кырова, Е. Д., Федосенко, Е. В., Милехин, А. Г., & Терещенко, О. Е. (2025). Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films. Journal of Raman Spectroscopy, 56(5), 409-419. https://doi.org/10.1002/jrs.6779

Vancouver

Kumar N, Ищенко ДВ, Милехин ИА, Кырова ЕД, Федосенко ЕВ, Милехин АГ и пр. Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films. Journal of Raman Spectroscopy. 2025 Май 1;56(5):409-419. https://doi.org/10.1002/jrs.6779

Author

Kumar, N. ; Ищенко, Д.В. ; Милехин, И. А. ; Кырова, Е. Д. ; Федосенко, Е. В. ; Милехин, А. Г. ; Терещенко, Олег Евгеньевич. / Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films. в: Journal of Raman Spectroscopy. 2025 ; Том 56, № 5. стр. 409-419.

BibTeX

@article{999ca57259e34b3c983b3f00323eb8a8,
title = "Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films",
abstract = "Chemical composition dependent vibrational modes of manganese-based bismuth telluride (MBT) magnetic topological insulators thin films grown by molecular beam epitaxy were studied by Raman spectroscopy and compared with the vibrational modes of Bi2Te3 films. Intensity of (Formula presented.) TO mode was much stronger in Bi efficient MBT film. In contrast, vibrational cross-section of (Formula presented.) LO mode was stronger in Bi deficient MBT compound. (Formula presented.) TO mode corresponds to in-plane vibrations of Bi-Te atomic layers. Deficiency of Bi atoms in the MBT indicated that the vibrational degree of freedom of Bi-Te in the septuple unit cell was less probable. Antisymmetric out-of-phase vibration of Te-Te atoms resulted in (Formula presented.) LO mode in which Bi atom was stationary, therefore vibrational cross-section of this mode for Bi deficient MBT film was stronger. A resonantly excited Eg and A1g modes was observed at excitation energy 1.57 eV associated to deformation potential and Frohlich electron–phonon coupling, respectively.",
keywords = "magnetic topological insulators, molecular beam epitaxy, polarization-resolved resonant Raman spectroscopy, vibrational modes",
author = "N. Kumar and Д.В. Ищенко and Милехин, {И. А.} and Кырова, {Е. Д.} and Федосенко, {Е. В.} and Милехин, {А. Г.} and Терещенко, {Олег Евгеньевич}",
year = "2025",
month = may,
day = "1",
doi = "10.1002/jrs.6779",
language = "English",
volume = "56",
pages = "409--419",
journal = "Journal of Raman Spectroscopy",
issn = "0377-0486",
publisher = "Wiley-Blackwell",
number = "5",

}

RIS

TY - JOUR

T1 - Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese - Based Bismuth Telluride Topological Insulator Thin Films

AU - Kumar, N.

AU - Ищенко, Д.В.

AU - Милехин, И. А.

AU - Кырова, Е. Д.

AU - Федосенко, Е. В.

AU - Милехин, А. Г.

AU - Терещенко, Олег Евгеньевич

PY - 2025/5/1

Y1 - 2025/5/1

N2 - Chemical composition dependent vibrational modes of manganese-based bismuth telluride (MBT) magnetic topological insulators thin films grown by molecular beam epitaxy were studied by Raman spectroscopy and compared with the vibrational modes of Bi2Te3 films. Intensity of (Formula presented.) TO mode was much stronger in Bi efficient MBT film. In contrast, vibrational cross-section of (Formula presented.) LO mode was stronger in Bi deficient MBT compound. (Formula presented.) TO mode corresponds to in-plane vibrations of Bi-Te atomic layers. Deficiency of Bi atoms in the MBT indicated that the vibrational degree of freedom of Bi-Te in the septuple unit cell was less probable. Antisymmetric out-of-phase vibration of Te-Te atoms resulted in (Formula presented.) LO mode in which Bi atom was stationary, therefore vibrational cross-section of this mode for Bi deficient MBT film was stronger. A resonantly excited Eg and A1g modes was observed at excitation energy 1.57 eV associated to deformation potential and Frohlich electron–phonon coupling, respectively.

AB - Chemical composition dependent vibrational modes of manganese-based bismuth telluride (MBT) magnetic topological insulators thin films grown by molecular beam epitaxy were studied by Raman spectroscopy and compared with the vibrational modes of Bi2Te3 films. Intensity of (Formula presented.) TO mode was much stronger in Bi efficient MBT film. In contrast, vibrational cross-section of (Formula presented.) LO mode was stronger in Bi deficient MBT compound. (Formula presented.) TO mode corresponds to in-plane vibrations of Bi-Te atomic layers. Deficiency of Bi atoms in the MBT indicated that the vibrational degree of freedom of Bi-Te in the septuple unit cell was less probable. Antisymmetric out-of-phase vibration of Te-Te atoms resulted in (Formula presented.) LO mode in which Bi atom was stationary, therefore vibrational cross-section of this mode for Bi deficient MBT film was stronger. A resonantly excited Eg and A1g modes was observed at excitation energy 1.57 eV associated to deformation potential and Frohlich electron–phonon coupling, respectively.

KW - magnetic topological insulators

KW - molecular beam epitaxy

KW - polarization-resolved resonant Raman spectroscopy

KW - vibrational modes

UR - https://www.mendeley.com/catalogue/0c5ff0ff-92e5-33d5-9bc8-28a2cd87231a/

U2 - 10.1002/jrs.6779

DO - 10.1002/jrs.6779

M3 - Article

VL - 56

SP - 409

EP - 419

JO - Journal of Raman Spectroscopy

JF - Journal of Raman Spectroscopy

SN - 0377-0486

IS - 5

ER -

ID: 127401787