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Charge-induced formation of thin conducting layers on fluorinated graphite surface. / Asanov, Igor P.; Okotrub, Alexander V.; Gusel'nikov, Artem V.; Yushina, Irina V.; Vyalikh, Denis V.; Bulusheva, Lyubov G.

в: Carbon, Том 82, № C, 01.01.2015, стр. 446-458.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Asanov, IP, Okotrub, AV, Gusel'nikov, AV, Yushina, IV, Vyalikh, DV & Bulusheva, LG 2015, 'Charge-induced formation of thin conducting layers on fluorinated graphite surface', Carbon, Том. 82, № C, стр. 446-458. https://doi.org/10.1016/j.carbon.2014.10.088

APA

Asanov, I. P., Okotrub, A. V., Gusel'nikov, A. V., Yushina, I. V., Vyalikh, D. V., & Bulusheva, L. G. (2015). Charge-induced formation of thin conducting layers on fluorinated graphite surface. Carbon, 82(C), 446-458. https://doi.org/10.1016/j.carbon.2014.10.088

Vancouver

Asanov IP, Okotrub AV, Gusel'nikov AV, Yushina IV, Vyalikh DV, Bulusheva LG. Charge-induced formation of thin conducting layers on fluorinated graphite surface. Carbon. 2015 Янв. 1;82(C):446-458. https://doi.org/10.1016/j.carbon.2014.10.088

Author

Asanov, Igor P. ; Okotrub, Alexander V. ; Gusel'nikov, Artem V. ; Yushina, Irina V. ; Vyalikh, Denis V. ; Bulusheva, Lyubov G. / Charge-induced formation of thin conducting layers on fluorinated graphite surface. в: Carbon. 2015 ; Том 82, № C. стр. 446-458.

BibTeX

@article{5f17f37b00bf4fa98fa38a838197073d,
title = "Charge-induced formation of thin conducting layers on fluorinated graphite surface",
abstract = "We show that irradiation of room-temperature fluorinated graphite of C2F composition by electron beam with a kinetic energy of 500 eV detaches the fluorine atoms from two or three top layers. The dielectric property of C2F prevents effective penetration of the beam in depth of the sample, and electrons are accumulated between the interior layers. Comparative study of the initial C2F sample and that after irradiation by means of X-ray photoelectron, X-ray absorption near edge structure, Raman and reflection optical spectroscopy detects a partial recovering of the p-bonds which increases the surface conductivity by more than three orders. The mechanism responsible for removal of fluorine atoms from dielectric matrix under electron irradiation is proposed and substantiated by quantum chemical calculations.",
author = "Asanov, {Igor P.} and Okotrub, {Alexander V.} and Gusel'nikov, {Artem V.} and Yushina, {Irina V.} and Vyalikh, {Denis V.} and Bulusheva, {Lyubov G.}",
year = "2015",
month = jan,
day = "1",
doi = "10.1016/j.carbon.2014.10.088",
language = "English",
volume = "82",
pages = "446--458",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier",
number = "C",

}

RIS

TY - JOUR

T1 - Charge-induced formation of thin conducting layers on fluorinated graphite surface

AU - Asanov, Igor P.

AU - Okotrub, Alexander V.

AU - Gusel'nikov, Artem V.

AU - Yushina, Irina V.

AU - Vyalikh, Denis V.

AU - Bulusheva, Lyubov G.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We show that irradiation of room-temperature fluorinated graphite of C2F composition by electron beam with a kinetic energy of 500 eV detaches the fluorine atoms from two or three top layers. The dielectric property of C2F prevents effective penetration of the beam in depth of the sample, and electrons are accumulated between the interior layers. Comparative study of the initial C2F sample and that after irradiation by means of X-ray photoelectron, X-ray absorption near edge structure, Raman and reflection optical spectroscopy detects a partial recovering of the p-bonds which increases the surface conductivity by more than three orders. The mechanism responsible for removal of fluorine atoms from dielectric matrix under electron irradiation is proposed and substantiated by quantum chemical calculations.

AB - We show that irradiation of room-temperature fluorinated graphite of C2F composition by electron beam with a kinetic energy of 500 eV detaches the fluorine atoms from two or three top layers. The dielectric property of C2F prevents effective penetration of the beam in depth of the sample, and electrons are accumulated between the interior layers. Comparative study of the initial C2F sample and that after irradiation by means of X-ray photoelectron, X-ray absorption near edge structure, Raman and reflection optical spectroscopy detects a partial recovering of the p-bonds which increases the surface conductivity by more than three orders. The mechanism responsible for removal of fluorine atoms from dielectric matrix under electron irradiation is proposed and substantiated by quantum chemical calculations.

UR - http://www.scopus.com/inward/record.url?scp=84923566045&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2014.10.088

DO - 10.1016/j.carbon.2014.10.088

M3 - Article

AN - SCOPUS:84923566045

VL - 82

SP - 446

EP - 458

JO - Carbon

JF - Carbon

SN - 0008-6223

IS - C

ER -

ID: 134931552