Standard

Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique. / Schubert, J.; Schöning, M. J.; Schmidt, C.; Siegert, M.; Mesters, St; Zander, W.; Kordos, P.; Lüth, H.; Legin, A.; Mourzina, Yu G.; Seleznev, B.; Vlasov, Yu G.

в: Applied Physics A: Materials Science and Processing, Том 69, № 7, 01.01.1999.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Schubert, J, Schöning, MJ, Schmidt, C, Siegert, M, Mesters, S, Zander, W, Kordos, P, Lüth, H, Legin, A, Mourzina, YG, Seleznev, B & Vlasov, YG 1999, 'Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique', Applied Physics A: Materials Science and Processing, Том. 69, № 7. https://doi.org/10.1007/s003390051534

APA

Schubert, J., Schöning, M. J., Schmidt, C., Siegert, M., Mesters, S., Zander, W., Kordos, P., Lüth, H., Legin, A., Mourzina, Y. G., Seleznev, B., & Vlasov, Y. G. (1999). Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique. Applied Physics A: Materials Science and Processing, 69(7). https://doi.org/10.1007/s003390051534

Vancouver

Schubert J, Schöning MJ, Schmidt C, Siegert M, Mesters S, Zander W и пр. Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique. Applied Physics A: Materials Science and Processing. 1999 Янв. 1;69(7). https://doi.org/10.1007/s003390051534

Author

Schubert, J. ; Schöning, M. J. ; Schmidt, C. ; Siegert, M. ; Mesters, St ; Zander, W. ; Kordos, P. ; Lüth, H. ; Legin, A. ; Mourzina, Yu G. ; Seleznev, B. ; Vlasov, Yu G. / Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique. в: Applied Physics A: Materials Science and Processing. 1999 ; Том 69, № 7.

BibTeX

@article{6a0707fcc72249049da755edae760421,
title = "Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique",
abstract = "One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multicomponent target material to a given substrate. This advantage of the PLD determined the choice to prepare chalcogenide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Te targets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.",
author = "J. Schubert and Sch{\"o}ning, {M. J.} and C. Schmidt and M. Siegert and St Mesters and W. Zander and P. Kordos and H. L{\"u}th and A. Legin and Mourzina, {Yu G.} and B. Seleznev and Vlasov, {Yu G.}",
year = "1999",
month = jan,
day = "1",
doi = "10.1007/s003390051534",
language = "English",
volume = "69",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Nature",
number = "7",

}

RIS

TY - JOUR

T1 - Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

AU - Schubert, J.

AU - Schöning, M. J.

AU - Schmidt, C.

AU - Siegert, M.

AU - Mesters, St

AU - Zander, W.

AU - Kordos, P.

AU - Lüth, H.

AU - Legin, A.

AU - Mourzina, Yu G.

AU - Seleznev, B.

AU - Vlasov, Yu G.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multicomponent target material to a given substrate. This advantage of the PLD determined the choice to prepare chalcogenide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Te targets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

AB - One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multicomponent target material to a given substrate. This advantage of the PLD determined the choice to prepare chalcogenide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Te targets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

UR - http://www.scopus.com/inward/record.url?scp=21344435733&partnerID=8YFLogxK

U2 - 10.1007/s003390051534

DO - 10.1007/s003390051534

M3 - Article

AN - SCOPUS:21344435733

VL - 69

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 7

ER -

ID: 30517634