TY - JOUR

T1 - Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

AU - Baraban, A.P.

AU - Selivanov, A.A.

AU - Dmitriev, V.A.

AU - Drozd, V.E.

AU - Drozd, A.V.

PY - 2019/3/26

Y1 - 2019/3/26

N2 - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

AB - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

UR - https://elibrary.ru/item.asp?id=38688394

UR - https://link.springer.com/article/10.1134/S1063785019030210

M3 - Article

VL - 45

SP - 255

EP - 257

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -