Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors

Standard

Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors. / Glazov, Mikhail M.; Chernikov, Alexey.

в: Physica Status Solidi (B) Basic Research, Том 255, № 12, 1800216, 12.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{1e48dfd56e0240c2bb28071a4ce2589d,

title = "Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors",

abstract = "The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.",

keywords = "Excitons, Free-carrier screening, Transition-metal dichalcogenides, Two-dimensional semiconductors, two-dimensional semiconductors, free-carrier screening, excitons, transition-metal dichalcogenides, ELECTRONIC-PROPERTIES, TRIONS",

author = "Glazov, {Mikhail M.} and Alexey Chernikov",

year = "2018",

month = dec,

doi = "10.1002/pssb.201800216",

language = "English",

volume = "255",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-Blackwell",

number = "12",

}

RIS

TY - JOUR

T1 - Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors

AU - Glazov, Mikhail M.

AU - Chernikov, Alexey

PY - 2018/12

Y1 - 2018/12

N2 - The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.

AB - The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.

KW - Excitons

KW - Free-carrier screening

KW - Transition-metal dichalcogenides

KW - Two-dimensional semiconductors

KW - two-dimensional semiconductors

KW - free-carrier screening

KW - excitons

KW - transition-metal dichalcogenides

KW - ELECTRONIC-PROPERTIES

KW - TRIONS

UR - http://www.scopus.com/inward/record.url?scp=85050458415&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/breakdown-static-approximation-free-carrier-screening-excitons-monolayer-semiconductors

U2 - 10.1002/pssb.201800216

DO - 10.1002/pssb.201800216

M3 - Article

AN - SCOPUS:85050458415

VL - 255

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 12

M1 - 1800216

ER -

ID: 36289365