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Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. / Fernandez, L.; Makarova, A. A.; Laubschat, C.; Vyalikh, D. V.; Usachov, D. Yu; Ortega, J. E.; Schiller, F.

в: 2D Materials, Том 6, № 2, 025013, 08.02.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Fernandez, L, Makarova, AA, Laubschat, C, Vyalikh, DV, Usachov, DY, Ortega, JE & Schiller, F 2019, 'Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal', 2D Materials, Том. 6, № 2, 025013. https://doi.org/10.1088/2053-1583/ab01e7

APA

Fernandez, L., Makarova, A. A., Laubschat, C., Vyalikh, D. V., Usachov, D. Y., Ortega, J. E., & Schiller, F. (2019). Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. 2D Materials, 6(2), [025013]. https://doi.org/10.1088/2053-1583/ab01e7

Vancouver

Fernandez L, Makarova AA, Laubschat C, Vyalikh DV, Usachov DY, Ortega JE и пр. Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. 2D Materials. 2019 Февр. 8;6(2). 025013. https://doi.org/10.1088/2053-1583/ab01e7

Author

Fernandez, L. ; Makarova, A. A. ; Laubschat, C. ; Vyalikh, D. V. ; Usachov, D. Yu ; Ortega, J. E. ; Schiller, F. / Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. в: 2D Materials. 2019 ; Том 6, № 2.

BibTeX

@article{1df3af4f198b42e6b834fce513970d94,
title = "Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal",
abstract = "The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.",
keywords = "Boron nitride, electronic properties, III-V semiconductors, Monolayers, Nitrides",
author = "L. Fernandez and Makarova, {A. A.} and C. Laubschat and Vyalikh, {D. V.} and Usachov, {D. Yu} and Ortega, {J. E.} and F. Schiller",
year = "2019",
month = feb,
day = "8",
doi = "10.1088/2053-1583/ab01e7",
language = "English",
volume = "6",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "2",

}

RIS

TY - JOUR

T1 - Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal

AU - Fernandez, L.

AU - Makarova, A. A.

AU - Laubschat, C.

AU - Vyalikh, D. V.

AU - Usachov, D. Yu

AU - Ortega, J. E.

AU - Schiller, F.

PY - 2019/2/8

Y1 - 2019/2/8

N2 - The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

AB - The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

KW - Boron nitride

KW - electronic properties

KW - III-V semiconductors

KW - Monolayers

KW - Nitrides

UR - http://www.scopus.com/inward/record.url?scp=85065333713&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/ab01e7

DO - 10.1088/2053-1583/ab01e7

M3 - Article

AN - SCOPUS:85065333713

VL - 6

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 2

M1 - 025013

ER -

ID: 41747507