Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets. / Uymina, P.G.; Anikina, M.A.; Speshilova, A.B.; Kondratev, V.M.; Karaseva, E.P.; Shmakov, S.V.; Kuznetsov, A.; Syuy, A.V.; Osipov, A.A.; Mishin, M.V.; Bolshakov, A.D.
в: Materials Science in Semiconductor Processing, Том 200, 01.12.2025.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets
AU - Uymina, P.G.
AU - Anikina, M.A.
AU - Speshilova, A.B.
AU - Kondratev, V.M.
AU - Karaseva, E.P.
AU - Shmakov, S.V.
AU - Kuznetsov, A.
AU - Syuy, A.V.
AU - Osipov, A.A.
AU - Mishin, M.V.
AU - Bolshakov, A.D.
N1 - Export Date: 01 November 2025; Cited By: 0; Correspondence Address: A.D. Bolshakov; Moscow Center for Advanced Studies, Moscow, Kulakova str. 20, 123592, Russian Federation; email: bolshakov@live.com
PY - 2025/12/1
Y1 - 2025/12/1
N2 - The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. © 2025 Elsevier B.V., All rights reserved.
AB - The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. © 2025 Elsevier B.V., All rights reserved.
KW - CVD
KW - Molybdenum disulfide (MoS2)
KW - Morphology analysis
KW - Optical properties
KW - Vertically-aligned structures (VAS)
KW - Layered semiconductors
KW - Molybdenum compounds
KW - Morphology
KW - Sulfur compounds
KW - Chemical vapour deposition
KW - Molybdenum disulfide
KW - Molybdenum disulphide (MoS2)
KW - MoS 2
KW - Optical-
KW - Property
KW - Two-dimensional materials
KW - Vertically aligned
KW - Vertically-aligned structure
KW - Chemical vapor deposition
UR - https://www.mendeley.com/catalogue/f98abb5b-e063-3e43-ac38-70cfabaaeab1/
U2 - 10.1016/j.mssp.2025.109906
DO - 10.1016/j.mssp.2025.109906
M3 - статья
VL - 200
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -
ID: 143469163