Standard

Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets. / Uymina, P.G.; Anikina, M.A.; Speshilova, A.B.; Kondratev, V.M.; Karaseva, E.P.; Shmakov, S.V.; Kuznetsov, A.; Syuy, A.V.; Osipov, A.A.; Mishin, M.V.; Bolshakov, A.D.

в: Materials Science in Semiconductor Processing, Том 200, 01.12.2025.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Uymina, PG, Anikina, MA, Speshilova, AB, Kondratev, VM, Karaseva, EP, Shmakov, SV, Kuznetsov, A, Syuy, AV, Osipov, AA, Mishin, MV & Bolshakov, AD 2025, 'Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets', Materials Science in Semiconductor Processing, Том. 200. https://doi.org/10.1016/j.mssp.2025.109906

APA

Uymina, P. G., Anikina, M. A., Speshilova, A. B., Kondratev, V. M., Karaseva, E. P., Shmakov, S. V., Kuznetsov, A., Syuy, A. V., Osipov, A. A., Mishin, M. V., & Bolshakov, A. D. (2025). Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets. Materials Science in Semiconductor Processing, 200. https://doi.org/10.1016/j.mssp.2025.109906

Vancouver

Uymina PG, Anikina MA, Speshilova AB, Kondratev VM, Karaseva EP, Shmakov SV и пр. Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets. Materials Science in Semiconductor Processing. 2025 Дек. 1;200. https://doi.org/10.1016/j.mssp.2025.109906

Author

Uymina, P.G. ; Anikina, M.A. ; Speshilova, A.B. ; Kondratev, V.M. ; Karaseva, E.P. ; Shmakov, S.V. ; Kuznetsov, A. ; Syuy, A.V. ; Osipov, A.A. ; Mishin, M.V. ; Bolshakov, A.D. / Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets. в: Materials Science in Semiconductor Processing. 2025 ; Том 200.

BibTeX

@article{8938a77e66694ce0b4a48d1b6e93d423,
title = "Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets",
abstract = "The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. {\textcopyright} 2025 Elsevier B.V., All rights reserved.",
keywords = "CVD, Molybdenum disulfide (MoS2), Morphology analysis, Optical properties, Vertically-aligned structures (VAS), Layered semiconductors, Molybdenum compounds, Morphology, Sulfur compounds, Chemical vapour deposition, Molybdenum disulfide, Molybdenum disulphide (MoS2), MoS 2, Optical-, Property, Two-dimensional materials, Vertically aligned, Vertically-aligned structure, Chemical vapor deposition",
author = "P.G. Uymina and M.A. Anikina and A.B. Speshilova and V.M. Kondratev and E.P. Karaseva and S.V. Shmakov and A. Kuznetsov and A.V. Syuy and A.A. Osipov and M.V. Mishin and A.D. Bolshakov",
note = "Export Date: 01 November 2025; Cited By: 0; Correspondence Address: A.D. Bolshakov; Moscow Center for Advanced Studies, Moscow, Kulakova str. 20, 123592, Russian Federation; email: bolshakov@live.com",
year = "2025",
month = dec,
day = "1",
doi = "10.1016/j.mssp.2025.109906",
language = "Английский",
volume = "200",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Blossoming layers: Morphological engineering of vertically aligned MoS2 sheets

AU - Uymina, P.G.

AU - Anikina, M.A.

AU - Speshilova, A.B.

AU - Kondratev, V.M.

AU - Karaseva, E.P.

AU - Shmakov, S.V.

AU - Kuznetsov, A.

AU - Syuy, A.V.

AU - Osipov, A.A.

AU - Mishin, M.V.

AU - Bolshakov, A.D.

N1 - Export Date: 01 November 2025; Cited By: 0; Correspondence Address: A.D. Bolshakov; Moscow Center for Advanced Studies, Moscow, Kulakova str. 20, 123592, Russian Federation; email: bolshakov@live.com

PY - 2025/12/1

Y1 - 2025/12/1

N2 - The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. © 2025 Elsevier B.V., All rights reserved.

AB - The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. © 2025 Elsevier B.V., All rights reserved.

KW - CVD

KW - Molybdenum disulfide (MoS2)

KW - Morphology analysis

KW - Optical properties

KW - Vertically-aligned structures (VAS)

KW - Layered semiconductors

KW - Molybdenum compounds

KW - Morphology

KW - Sulfur compounds

KW - Chemical vapour deposition

KW - Molybdenum disulfide

KW - Molybdenum disulphide (MoS2)

KW - MoS 2

KW - Optical-

KW - Property

KW - Two-dimensional materials

KW - Vertically aligned

KW - Vertically-aligned structure

KW - Chemical vapor deposition

UR - https://www.mendeley.com/catalogue/f98abb5b-e063-3e43-ac38-70cfabaaeab1/

U2 - 10.1016/j.mssp.2025.109906

DO - 10.1016/j.mssp.2025.109906

M3 - статья

VL - 200

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -

ID: 143469163