Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Behavior of phonons in short period GaN-AlN superlattices. / Pinquier, C.; Frandon, J.; Demangeot, F.; Smirnov, M.; Sarua, A.; Kuball, M.; Monroy, E.; Daudin, B.
в: Physica Status Solidi Conferences, Том 1, № 11, 2004, стр. 2706-2710.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Behavior of phonons in short period GaN-AlN superlattices
AU - Pinquier, C.
AU - Frandon, J.
AU - Demangeot, F.
AU - Smirnov, M.
AU - Sarua, A.
AU - Kuball, M.
AU - Monroy, E.
AU - Daudin, B.
N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004
Y1 - 2004
N2 - This work deals with short period GaN-AlN superlattices, studied by Raman spectroscopy using visible and ultraviolet excitations. The E2 (high) and E1 (TO) phonons show a two-mode behavior. In contrast, we observed an unique spectral line in the A1 (TO) spectrum: its dependence on the mean superlattice composition is in good agreement with recent theoretical results predicting its delocalized character. Two Raman lines strongly enhanced under ultraviolet excitations, were observed in the A 1 (LO) spectrum. Lattice dynamical simulations within the Rigid Ion Model have been performed to assign these Raman lines. The first one corresponds to an A1 (LO) phonon confined in GaN wells. The second line is assigned to a dispersive B1 - like mode with an amplitude modulation similar to that of an interface mode.
AB - This work deals with short period GaN-AlN superlattices, studied by Raman spectroscopy using visible and ultraviolet excitations. The E2 (high) and E1 (TO) phonons show a two-mode behavior. In contrast, we observed an unique spectral line in the A1 (TO) spectrum: its dependence on the mean superlattice composition is in good agreement with recent theoretical results predicting its delocalized character. Two Raman lines strongly enhanced under ultraviolet excitations, were observed in the A 1 (LO) spectrum. Lattice dynamical simulations within the Rigid Ion Model have been performed to assign these Raman lines. The first one corresponds to an A1 (LO) phonon confined in GaN wells. The second line is assigned to a dispersive B1 - like mode with an amplitude modulation similar to that of an interface mode.
UR - http://www.scopus.com/inward/record.url?scp=11044230050&partnerID=8YFLogxK
U2 - 10.1002/pssc.200405277
DO - 10.1002/pssc.200405277
M3 - Article
VL - 1
SP - 2706
EP - 2710
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 11
ER -
ID: 5212504