Standard
Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation. / Verbitskiy, N.I.; Fedorov, A.V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D.Yu.; Vyalikh, D.V.; Yashina, L.V.; Eliseev, A.A.; Pichler, T.; Grüneis, A.
в:
Scientific Reports, Том 5, 2015, стр. 17700_1-9.
Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Harvard
Verbitskiy, NI
, Fedorov, AV, Profeta, G, Stroppa, A, Petaccia, L, Senkovskiy, B, Nefedov, A, Wöll, C
, Usachov, DY, Vyalikh, DV, Yashina, LV, Eliseev, AA, Pichler, T & Grüneis, A 2015, '
Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation',
Scientific Reports, Том. 5, стр. 17700_1-9.
https://doi.org/10.1038/srep17700APA
Verbitskiy, N. I.
, Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Wöll, C.
, Usachov, D. Y., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T., & Grüneis, A. (2015).
Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation.
Scientific Reports,
5, 17700_1-9.
https://doi.org/10.1038/srep17700Vancouver
Author
Verbitskiy, N.I.
; Fedorov, A.V. ; Profeta, G. ; Stroppa, A. ; Petaccia, L. ; Senkovskiy, B. ; Nefedov, A. ; Wöll, C.
; Usachov, D.Yu. ; Vyalikh, D.V. ; Yashina, L.V. ; Eliseev, A.A. ; Pichler, T. ; Grüneis, A. /
Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation. в:
Scientific Reports. 2015 ; Том 5. стр. 17700_1-9.
BibTeX
@article{2705e92682104edea9dc652993c79213,
title = "Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation",
author = "N.I. Verbitskiy and A.V. Fedorov and G. Profeta and A. Stroppa and L. Petaccia and B. Senkovskiy and A. Nefedov and C. W{\"o}ll and D.Yu. Usachov and D.V. Vyalikh and L.V. Yashina and A.A. Eliseev and T. Pichler and A. Gr{\"u}neis",
year = "2015",
doi = "10.1038/srep17700",
language = "English",
volume = "5",
pages = "17700_1--9",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
}
RIS
TY - JOUR
T1 - Atomically precise semiconductor - graphene and hBN interfaces by Ge intercalation
AU - Verbitskiy, N.I.
AU - Fedorov, A.V.
AU - Profeta, G.
AU - Stroppa, A.
AU - Petaccia, L.
AU - Senkovskiy, B.
AU - Nefedov, A.
AU - Wöll, C.
AU - Usachov, D.Yu.
AU - Vyalikh, D.V.
AU - Yashina, L.V.
AU - Eliseev, A.A.
AU - Pichler, T.
AU - Grüneis, A.
PY - 2015
Y1 - 2015
U2 - 10.1038/srep17700
DO - 10.1038/srep17700
M3 - Article
VL - 5
SP - 17700_1-9
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
ER -
