Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.