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Atomic configuration and charge state of hydrogen at dislocations in silicon. / Vysotskii, N. V.; Loshachenko, A. S.; Vyvenko, O. F.

в: Semiconductors, Том 51, № 3, 01.03.2017, стр. 293-298.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Vysotskii, NV, Loshachenko, AS & Vyvenko, OF 2017, 'Atomic configuration and charge state of hydrogen at dislocations in silicon', Semiconductors, Том. 51, № 3, стр. 293-298. https://doi.org/10.1134/S1063782617030265

APA

Vysotskii, N. V., Loshachenko, A. S., & Vyvenko, O. F. (2017). Atomic configuration and charge state of hydrogen at dislocations in silicon. Semiconductors, 51(3), 293-298. https://doi.org/10.1134/S1063782617030265

Vancouver

Vysotskii NV, Loshachenko AS, Vyvenko OF. Atomic configuration and charge state of hydrogen at dislocations in silicon. Semiconductors. 2017 Март 1;51(3):293-298. https://doi.org/10.1134/S1063782617030265

Author

Vysotskii, N. V. ; Loshachenko, A. S. ; Vyvenko, O. F. / Atomic configuration and charge state of hydrogen at dislocations in silicon. в: Semiconductors. 2017 ; Том 51, № 3. стр. 293-298.

BibTeX

@article{4fea9514c54e4f6da9ca2f6142637f39,
title = "Atomic configuration and charge state of hydrogen at dislocations in silicon",
abstract = "The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm–1 was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H0 at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.",
author = "Vysotskii, {N. V.} and Loshachenko, {A. S.} and Vyvenko, {O. F.}",
year = "2017",
month = mar,
day = "1",
doi = "10.1134/S1063782617030265",
language = "English",
volume = "51",
pages = "293--298",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

RIS

TY - JOUR

T1 - Atomic configuration and charge state of hydrogen at dislocations in silicon

AU - Vysotskii, N. V.

AU - Loshachenko, A. S.

AU - Vyvenko, O. F.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm–1 was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H0 at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.

AB - The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm–1 was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H0 at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.

UR - http://www.scopus.com/inward/record.url?scp=85015641572&partnerID=8YFLogxK

U2 - 10.1134/S1063782617030265

DO - 10.1134/S1063782617030265

M3 - Article

AN - SCOPUS:85015641572

VL - 51

SP - 293

EP - 298

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 41215487