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Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold. / Komolov, A. S.; Lazneva, E. F.; Zhukov, Yu M.; Pshenichnyuk, S. A.; Agina, E. V.; Dominskii, D. I.; Anisimov, D. S.; Parashchuk, D. Yu.

в: Physics of the Solid State, Том 59, № 12, 01.12.2017, стр. 2491-2496.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Komolov, AS, Lazneva, EF, Zhukov, YM, Pshenichnyuk, SA, Agina, EV, Dominskii, DI, Anisimov, DS & Parashchuk, DY 2017, 'Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold', Physics of the Solid State, Том. 59, № 12, стр. 2491-2496. https://doi.org/10.1134/S1063783417120228

APA

Vancouver

Author

Komolov, A. S. ; Lazneva, E. F. ; Zhukov, Yu M. ; Pshenichnyuk, S. A. ; Agina, E. V. ; Dominskii, D. I. ; Anisimov, D. S. ; Parashchuk, D. Yu. / Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold. в: Physics of the Solid State. 2017 ; Том 59, № 12. стр. 2491-2496.

BibTeX

@article{b3074c6dd5a14cccbaafaa2c050f097a,
title = "Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold",
abstract = "Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir–Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10–15%, which indicates that Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of ~1 μA in several 30-s steps has led to the etching of surface adsorbates and next Langmuir–Blodgett films of the siloxane dimer of quaterthiophene.",
author = "Komolov, {A. S.} and Lazneva, {E. F.} and Zhukov, {Yu M.} and Pshenichnyuk, {S. A.} and Agina, {E. V.} and Dominskii, {D. I.} and Anisimov, {D. S.} and Parashchuk, {D. Yu}",
year = "2017",
month = dec,
day = "1",
doi = "10.1134/S1063783417120228",
language = "English",
volume = "59",
pages = "2491--2496",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",

}

RIS

TY - JOUR

T1 - Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold

AU - Komolov, A. S.

AU - Lazneva, E. F.

AU - Zhukov, Yu M.

AU - Pshenichnyuk, S. A.

AU - Agina, E. V.

AU - Dominskii, D. I.

AU - Anisimov, D. S.

AU - Parashchuk, D. Yu

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir–Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10–15%, which indicates that Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of ~1 μA in several 30-s steps has led to the etching of surface adsorbates and next Langmuir–Blodgett films of the siloxane dimer of quaterthiophene.

AB - Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir–Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10–15%, which indicates that Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of ~1 μA in several 30-s steps has led to the etching of surface adsorbates and next Langmuir–Blodgett films of the siloxane dimer of quaterthiophene.

UR - http://www.scopus.com/inward/record.url?scp=85038110853&partnerID=8YFLogxK

U2 - 10.1134/S1063783417120228

DO - 10.1134/S1063783417120228

M3 - Article

AN - SCOPUS:85038110853

VL - 59

SP - 2491

EP - 2496

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -

ID: 13722398