Standard

Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique. / Griesbeck, Michael; Glazov, Mikhail; Sherman, Eugene; Korn, Tobias; Schuh, Dieter; Wegscheider, Werner; Schüller, Christian.

Spintronics IV. Том 8100 2011. 810015.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференцииРецензирование

Harvard

Griesbeck, M, Glazov, M, Sherman, E, Korn, T, Schuh, D, Wegscheider, W & Schüller, C 2011, Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique. в Spintronics IV. Том. 8100, 810015, Spintronics IV, San Diego, CA, Соединенные Штаты Америки, 21/08/11. https://doi.org/10.1117/12.893539

APA

Griesbeck, M., Glazov, M., Sherman, E., Korn, T., Schuh, D., Wegscheider, W., & Schüller, C. (2011). Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique. в Spintronics IV (Том 8100). [810015] https://doi.org/10.1117/12.893539

Vancouver

Author

Griesbeck, Michael ; Glazov, Mikhail ; Sherman, Eugene ; Korn, Tobias ; Schuh, Dieter ; Wegscheider, Werner ; Schüller, Christian. / Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique. Spintronics IV. Том 8100 2011.

BibTeX

@inproceedings{8101141a79774c0a9a9b58df4cf0a0f4,
title = "Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique",
abstract = "Spin dynamics in zincblende two-dimensional electron systems is usually dominated by the Dyakonov-Perel spin dephasing mechanism resulting from the underlying spin-orbit fields. An exceptional situation is realized in symmetrically grown and doped GaAs/AlGaAs quantum wells grown along the [110] direction, where the Rashba contribution is negligible and the effective Dresselhaus spin-orbit field is perpendicular to the sample plane. In such a system the spin dephasing times for in- and out-of-plane crystallographic directions are expected to be strongly different and the out-of-plane spin dephasing time is significantly enhanced as compared with conventional systems. We observe the spin relaxation anisotropy by resonant spin amplification measurements in a 30 nm wide double-sided symmetrically δ-doped single quantum well with a very high mobility of about 3·106 cm 2/Vs at 1.5K. A comparison of the measured resonant spin amplification traces with the developed theory taking into account the spin dephasing anisotropy yields the dephasing times whose anisotropy and magnitudes are in-line with the theoretical expectations.",
keywords = "Resonant spin amplification, Spin dynamics, Spin-orbit interaction, Time-resolved Kerr rotation",
author = "Michael Griesbeck and Mikhail Glazov and Eugene Sherman and Tobias Korn and Dieter Schuh and Werner Wegscheider and Christian Sch{\"u}ller",
year = "2011",
month = oct,
day = "11",
doi = "10.1117/12.893539",
language = "English",
isbn = "9780819487100",
volume = "8100",
booktitle = "Spintronics IV",
note = "Spintronics IV ; Conference date: 21-08-2011 Through 24-08-2011",

}

RIS

TY - GEN

T1 - Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique

AU - Griesbeck, Michael

AU - Glazov, Mikhail

AU - Sherman, Eugene

AU - Korn, Tobias

AU - Schuh, Dieter

AU - Wegscheider, Werner

AU - Schüller, Christian

PY - 2011/10/11

Y1 - 2011/10/11

N2 - Spin dynamics in zincblende two-dimensional electron systems is usually dominated by the Dyakonov-Perel spin dephasing mechanism resulting from the underlying spin-orbit fields. An exceptional situation is realized in symmetrically grown and doped GaAs/AlGaAs quantum wells grown along the [110] direction, where the Rashba contribution is negligible and the effective Dresselhaus spin-orbit field is perpendicular to the sample plane. In such a system the spin dephasing times for in- and out-of-plane crystallographic directions are expected to be strongly different and the out-of-plane spin dephasing time is significantly enhanced as compared with conventional systems. We observe the spin relaxation anisotropy by resonant spin amplification measurements in a 30 nm wide double-sided symmetrically δ-doped single quantum well with a very high mobility of about 3·106 cm 2/Vs at 1.5K. A comparison of the measured resonant spin amplification traces with the developed theory taking into account the spin dephasing anisotropy yields the dephasing times whose anisotropy and magnitudes are in-line with the theoretical expectations.

AB - Spin dynamics in zincblende two-dimensional electron systems is usually dominated by the Dyakonov-Perel spin dephasing mechanism resulting from the underlying spin-orbit fields. An exceptional situation is realized in symmetrically grown and doped GaAs/AlGaAs quantum wells grown along the [110] direction, where the Rashba contribution is negligible and the effective Dresselhaus spin-orbit field is perpendicular to the sample plane. In such a system the spin dephasing times for in- and out-of-plane crystallographic directions are expected to be strongly different and the out-of-plane spin dephasing time is significantly enhanced as compared with conventional systems. We observe the spin relaxation anisotropy by resonant spin amplification measurements in a 30 nm wide double-sided symmetrically δ-doped single quantum well with a very high mobility of about 3·106 cm 2/Vs at 1.5K. A comparison of the measured resonant spin amplification traces with the developed theory taking into account the spin dephasing anisotropy yields the dephasing times whose anisotropy and magnitudes are in-line with the theoretical expectations.

KW - Resonant spin amplification

KW - Spin dynamics

KW - Spin-orbit interaction

KW - Time-resolved Kerr rotation

UR - http://www.scopus.com/inward/record.url?scp=80053470643&partnerID=8YFLogxK

U2 - 10.1117/12.893539

DO - 10.1117/12.893539

M3 - Conference contribution

AN - SCOPUS:80053470643

SN - 9780819487100

VL - 8100

BT - Spintronics IV

T2 - Spintronics IV

Y2 - 21 August 2011 through 24 August 2011

ER -

ID: 36442660