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An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films. / Baraban, A.P.; Semykina, E.A.; Vaniochov, M.B.

в: Semiconductor Science and Technology, Том 21, 2006, стр. 881-885.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Baraban, AP, Semykina, EA & Vaniochov, MB 2006, 'An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films.', Semiconductor Science and Technology, Том. 21, стр. 881-885.

APA

Baraban, A. P., Semykina, E. A., & Vaniochov, M. B. (2006). An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films. Semiconductor Science and Technology, 21, 881-885.

Vancouver

Baraban AP, Semykina EA, Vaniochov MB. An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films. Semiconductor Science and Technology. 2006;21:881-885.

Author

Baraban, A.P. ; Semykina, E.A. ; Vaniochov, M.B. / An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films. в: Semiconductor Science and Technology. 2006 ; Том 21. стр. 881-885.

BibTeX

@article{8fb0dcfcfa104a989eac68b028d2e31f,
title = "An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films.",
author = "A.P. Baraban and E.A. Semykina and M.B. Vaniochov",
year = "2006",
language = "не определен",
volume = "21",
pages = "881--885",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",

}

RIS

TY - JOUR

T1 - An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films.

AU - Baraban, A.P.

AU - Semykina, E.A.

AU - Vaniochov, M.B.

PY - 2006

Y1 - 2006

M3 - статья

VL - 21

SP - 881

EP - 885

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -

ID: 5253811