Adsorption-induced gap states of h-BN on metal surfaces › Научные исследования в СПбГУ

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Adsorption-induced gap states of h-BN on metal surfaces. / Preobrajenski, A. B.; Krasnikov, S. A.; Vinogradov, A. S.; Ng, May Ling; Käämbre, T.; Cafolla, A. A.; Mårtensson, N.

в: Physical Review B - Condensed Matter and Materials Physics, Том 77, № 8, 085421, 19.02.2008.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Preobrajenski, AB, Krasnikov, SA, Vinogradov, AS, Ng, ML, Käämbre, T, Cafolla, AA & Mårtensson, N 2008, 'Adsorption-induced gap states of h-BN on metal surfaces', Physical Review B - Condensed Matter and Materials Physics, Том. 77, № 8, 085421. https://doi.org/10.1103/PhysRevB.77.085421

APA

Preobrajenski, A. B., Krasnikov, S. A., Vinogradov, A. S., Ng, M. L., Käämbre, T., Cafolla, A. A., & Mårtensson, N. (2008). Adsorption-induced gap states of h-BN on metal surfaces. Physical Review B - Condensed Matter and Materials Physics, 77(8), [085421]. https://doi.org/10.1103/PhysRevB.77.085421

Vancouver

Preobrajenski AB, Krasnikov SA, Vinogradov AS, Ng ML, Käämbre T, Cafolla AA и пр. Adsorption-induced gap states of h-BN on metal surfaces. Physical Review B - Condensed Matter and Materials Physics. 2008 Февр. 19;77(8). 085421. https://doi.org/10.1103/PhysRevB.77.085421

Author

Preobrajenski, A. B. ; Krasnikov, S. A. ; Vinogradov, A. S. ; Ng, May Ling ; Käämbre, T. ; Cafolla, A. A. ; Mårtensson, N. / Adsorption-induced gap states of h-BN on metal surfaces. в: Physical Review B - Condensed Matter and Materials Physics. 2008 ; Том 77, № 8.

BibTeX

@article{777473e7a48a48e39315a8a9cde97969,

title = "Adsorption-induced gap states of h-BN on metal surfaces",

abstract = "The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN Ni (111), somewhat less for h-BN Rh (111) and still less for h-BN Pt (111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.",

author = "Preobrajenski, {A. B.} and Krasnikov, {S. A.} and Vinogradov, {A. S.} and Ng, {May Ling} and T. K{\"a}{\"a}mbre and Cafolla, {A. A.} and N. M{\aa}rtensson",

year = "2008",

month = feb,

day = "19",

doi = "10.1103/PhysRevB.77.085421",

language = "English",

volume = "77",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "8",

}

RIS

TY - JOUR

T1 - Adsorption-induced gap states of h-BN on metal surfaces

AU - Preobrajenski, A. B.

AU - Krasnikov, S. A.

AU - Vinogradov, A. S.

AU - Ng, May Ling

AU - Käämbre, T.

AU - Cafolla, A. A.

AU - Mårtensson, N.

PY - 2008/2/19

Y1 - 2008/2/19

N2 - The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN Ni (111), somewhat less for h-BN Rh (111) and still less for h-BN Pt (111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.

AB - The formation of hexagonal boron nitride (h-BN) monolayers on Ni(111), Rh(111), and Pt(111) has been studied by a combination of x-ray emission, angle-resolved valence band photoemission, and x-ray absorption in search for interface-induced gap states of h-BN. A significant density of both occupied and unoccupied gap states with N 2p and B 2p characters is observed for h-BN Ni (111), somewhat less for h-BN Rh (111) and still less for h-BN Pt (111). X-ray emission shows that the h-BN monolayer is chemisorbed strongly on Ni(111) and very weakly on Pt(111). We associate the gap states of h-BN adsorbed on the transition metal surfaces with the orbital mixing and electron sharing at the interface because their density increases with the growing strength of chemisorption.

UR - http://www.scopus.com/inward/record.url?scp=40849094399&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.77.085421

DO - 10.1103/PhysRevB.77.085421

M3 - Article

AN - SCOPUS:40849094399

VL - 77

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

M1 - 085421

ER -

ID: 76050407