Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Abnormal electronic structure of chemically modified n-InP(100) surfaces. / Lebedev, Mikhail V.; Lvova, Tatiana V.; Smirnov, Alexander N.; Davydov, Valery Yu; Koroleva, Aleksandra V.; Zhizhin, Evgeny V.; Lebedev, Sergey V.
в: Journal of Materials Chemistry C, Том 10, № 6, 10.02.2022, стр. 2163-2172.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Abnormal electronic structure of chemically modified n-InP(100) surfaces
AU - Lebedev, Mikhail V.
AU - Lvova, Tatiana V.
AU - Smirnov, Alexander N.
AU - Davydov, Valery Yu
AU - Koroleva, Aleksandra V.
AU - Zhizhin, Evgeny V.
AU - Lebedev, Sergey V.
N1 - Publisher Copyright: This journal is © The Royal Society of Chemistry
PY - 2022/2/10
Y1 - 2022/2/10
N2 - Photoluminescence, Raman scattering, and X-ray photoelectron spectroscopy have been used to study the electronic structure of n-InP(100) surfaces modified with different sulfide solutions. Because of such a modification, the photoluminescence intensity of the semiconductor increases evidencing the surface electronic passivation. The efficiency of the n-InP(100) surface electronic passivation depends on the solvent and on the concentration of sulfide ions in the solution. The enhancement in the photoluminescence intensity after passivation is accompanied by narrowing of the surface space charge layer, while the surface band bending remains essentially intact or even increases after treatment with a dilute aqueous ammonium sulfide solution. Therefore, the shape of the band potentials in the near-surface region of the semiconductor is modified essentially by chemical treatment with sulfide solutions. In particular, the width of the space charge layer for chemically modified n-InP(100) surfaces is no longer proportional to the square root of the surface band bending due to occurrence of the surface dipole layer induced by In-S chemical bonds.
AB - Photoluminescence, Raman scattering, and X-ray photoelectron spectroscopy have been used to study the electronic structure of n-InP(100) surfaces modified with different sulfide solutions. Because of such a modification, the photoluminescence intensity of the semiconductor increases evidencing the surface electronic passivation. The efficiency of the n-InP(100) surface electronic passivation depends on the solvent and on the concentration of sulfide ions in the solution. The enhancement in the photoluminescence intensity after passivation is accompanied by narrowing of the surface space charge layer, while the surface band bending remains essentially intact or even increases after treatment with a dilute aqueous ammonium sulfide solution. Therefore, the shape of the band potentials in the near-surface region of the semiconductor is modified essentially by chemical treatment with sulfide solutions. In particular, the width of the space charge layer for chemically modified n-InP(100) surfaces is no longer proportional to the square root of the surface band bending due to occurrence of the surface dipole layer induced by In-S chemical bonds.
KW - X-RAY PHOTOELECTRON
KW - RAMAN-SCATTERING
KW - TEMPERATURE-DEPENDENCE
KW - RECOMBINATION VELOCITY
KW - WORK FUNCTION
KW - DEAD-LAYER
KW - BAND-GAP
KW - INP
KW - GAAS
KW - INP(001)
UR - http://www.scopus.com/inward/record.url?scp=85124480799&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/e2d32d7e-12ac-396d-88ea-3abcb7bec1ac/
U2 - 10.1039/d1tc03493f
DO - 10.1039/d1tc03493f
M3 - Article
AN - SCOPUS:85124480799
VL - 10
SP - 2163
EP - 2172
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 6
ER -
ID: 93968783