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A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network. / Yu, X.; Seifert, W.; Vyvenko, O. F.; Kittler, M.

в: Applied Physics Letters, Том 93, № 4, 2008, стр. 041108_1-3.

Результаты исследований: Научные публикации в периодических изданияхстатья

Harvard

Yu, X, Seifert, W, Vyvenko, OF & Kittler, M 2008, 'A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network', Applied Physics Letters, Том. 93, № 4, стр. 041108_1-3. https://doi.org/doi:10.1063/1.2965126

APA

Vancouver

Author

Yu, X. ; Seifert, W. ; Vyvenko, O. F. ; Kittler, M. / A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network. в: Applied Physics Letters. 2008 ; Том 93, № 4. стр. 041108_1-3.

BibTeX

@article{5fd73e93cb5a430eb6d8ad8c6dab1590,
title = "A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network",
author = "X. Yu and W. Seifert and Vyvenko, {O. F.} and M. Kittler",
year = "2008",
doi = "doi:10.1063/1.2965126",
language = "English",
volume = "93",
pages = "041108_1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "4",

}

RIS

TY - JOUR

T1 - A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network

AU - Yu, X.

AU - Seifert, W.

AU - Vyvenko, O. F.

AU - Kittler, M.

PY - 2008

Y1 - 2008

U2 - doi:10.1063/1.2965126

DO - doi:10.1063/1.2965126

M3 - Article

VL - 93

SP - 041108_1-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -

ID: 5270291