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Wurtzite AlGaAs Nanowires. / Leandro, L.; Reznik, R.; Clement, J D; Repän, J.; Reynolds, M.; Ubyivovk, E. V.; Shtrom, I. V.; Cirlin, G.; Akopian, N.

In: Scientific Reports, Vol. 10, No. 1, 735, 01.12.2020, p. 735.

Research output: Contribution to journal › Article › peer-review

Harvard

Leandro, L, Reznik, R, Clement, JD, Repän, J, Reynolds, M, Ubyivovk, EV, Shtrom, IV, Cirlin, G & Akopian, N 2020, 'Wurtzite AlGaAs Nanowires', Scientific Reports, vol. 10, no. 1, 735, pp. 735. https://doi.org/10.1038/s41598-020-57563-0

APA

Leandro, L., Reznik, R., Clement, J. D., Repän, J., Reynolds, M., Ubyivovk, E. V., Shtrom, I. V., Cirlin, G., & Akopian, N. (2020). Wurtzite AlGaAs Nanowires. Scientific Reports, 10(1), 735. [735]. https://doi.org/10.1038/s41598-020-57563-0

Vancouver

Leandro L, Reznik R, Clement JD, Repän J, Reynolds M, Ubyivovk EV et al. Wurtzite AlGaAs Nanowires. Scientific Reports. 2020 Dec 1;10(1):735. 735. https://doi.org/10.1038/s41598-020-57563-0

Author

Leandro, L. ; Reznik, R. ; Clement, J D ; Repän, J. ; Reynolds, M. ; Ubyivovk, E. V. ; Shtrom, I. V. ; Cirlin, G. ; Akopian, N. / Wurtzite AlGaAs Nanowires. In: Scientific Reports. 2020 ; Vol. 10, No. 1. pp. 735.

BibTeX

@article{b3583491a95f487b849ef03abb3ecf95,
title = "Wurtzite AlGaAs Nanowires",
abstract = "Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material.",
keywords = "OPTICAL-PROPERTIES",
author = "L. Leandro and R. Reznik and Clement, {J D} and J. Rep{\"a}n and M. Reynolds and Ubyivovk, {E. V.} and Shtrom, {I. V.} and G. Cirlin and N. Akopian",
note = "Leandro, L., Reznik, R., Clement, J.D. et al. Wurtzite AlGaAs Nanowires. Sci Rep 10, 735 (2020). https://proxy.library.spbu.ru:2060/10.1038/s41598-020-57563-0 Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41598-020-57563-0",
language = "English",
volume = "10",
pages = "735",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - Wurtzite AlGaAs Nanowires

AU - Leandro, L.

AU - Reznik, R.

AU - Clement, J D

AU - Repän, J.

AU - Reynolds, M.

AU - Ubyivovk, E. V.

AU - Shtrom, I. V.

AU - Cirlin, G.

AU - Akopian, N.

N1 - Leandro, L., Reznik, R., Clement, J.D. et al. Wurtzite AlGaAs Nanowires. Sci Rep 10, 735 (2020). https://proxy.library.spbu.ru:2060/10.1038/s41598-020-57563-0 Publisher Copyright: © 2020, The Author(s).

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material.

AB - Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material.

KW - OPTICAL-PROPERTIES

UR - http://www.scopus.com/inward/record.url?scp=85078246976&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/3d31f0e9-c004-349c-a661-61ea9db56b78/

U2 - 10.1038/s41598-020-57563-0

DO - 10.1038/s41598-020-57563-0

M3 - Article

C2 - 31959825

VL - 10

SP - 735

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 735

ER -

ID: 50803759