Research output: Contribution to journal › Article › peer-review
Unoccupied electronic states and energy level alignment at interfaces between Cu-phthalocyanine films and semiconductor surfaces. / Komolov, AS; Moller, PJ.
In: Synthetic Metals, Vol. 138, No. 1-2, 02.06.2003, p. 119-123.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Unoccupied electronic states and energy level alignment at interfaces between Cu-phthalocyanine films and semiconductor surfaces
AU - Komolov, AS
AU - Moller, PJ
PY - 2003/6/2
Y1 - 2003/6/2
N2 - Thin films of Cu-phthalocyanine (CuPc) were thermally deposited in UHV on silicon, on highly ordered pyrolytic graphite (HOPG) and on ZnO substrates. The surface potential and the density of unoccupied electron states (DOUS) located 1-25 eV above vacuum level were measured during the film deposition using an incident beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. Analysis of the TCS data allowed us to obtain DOUS features of the CuPc and to study charge transfer during the interface formation. A significant electron transfer from the CuPc film to SiO(2)/n-Si and n-Si(100) was observed and the charge transfer layer in the film extended up to 10 nm. Band bending in the substrates due to the electron transfer was also monitored. A less significant charge transfer was observed at the interfaces between the CuPc film and the ZnO(0001), SiO(2)/p-Si and HOPG substrates. A model for the extended charge-transfer layer (extended interface dipole) is suggested to explain the observed spectroscopic features of the interfaces. (C) 2003 Elsevier Science B.V. All rights reserved.
AB - Thin films of Cu-phthalocyanine (CuPc) were thermally deposited in UHV on silicon, on highly ordered pyrolytic graphite (HOPG) and on ZnO substrates. The surface potential and the density of unoccupied electron states (DOUS) located 1-25 eV above vacuum level were measured during the film deposition using an incident beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. Analysis of the TCS data allowed us to obtain DOUS features of the CuPc and to study charge transfer during the interface formation. A significant electron transfer from the CuPc film to SiO(2)/n-Si and n-Si(100) was observed and the charge transfer layer in the film extended up to 10 nm. Band bending in the substrates due to the electron transfer was also monitored. A less significant charge transfer was observed at the interfaces between the CuPc film and the ZnO(0001), SiO(2)/p-Si and HOPG substrates. A model for the extended charge-transfer layer (extended interface dipole) is suggested to explain the observed spectroscopic features of the interfaces. (C) 2003 Elsevier Science B.V. All rights reserved.
KW - surface electronic phenomena
KW - electron-solid scattering and transmission-elastic
KW - surface chemical reaction
KW - semiconductor-organic semiconductor interfaces silicon
KW - silicon oxides
KW - Cu-phthalocyanine
KW - COPPER-PHTHALOCYANINE
KW - SPECTROSCOPY
KW - MOLECULES
KW - METAL
KW - GRAPHITE
KW - DEVICES
KW - LAYERS
U2 - 10.1016/S0379-6779(02)01286-9
DO - 10.1016/S0379-6779(02)01286-9
M3 - статья
VL - 138
SP - 119
EP - 123
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 1-2
Y2 - 18 June 2002 through 21 June 2002
ER -
ID: 18881486