TY - JOUR

T1 - Unoccupied Electron States of Ultrathin Quaterphenyl Films on the Surfaces of Layered CdS and Oxidized Silicon

AU - Komolov, A. S.

AU - Lazneva, E. F.

AU - Gerasimova, N. B.

AU - Sobolev, V. S.

AU - Zhizhin, E. V.

AU - Pshenichnuk, S. A.

AU - Asfandiarov, N. L.

AU - Handke, B.

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021

Y1 - 2021

N2 - Abstract: Some results of studying the unoccupied electron states and the formation of a boundary potential barrier during the thermal vacuum deposition of ultrathin 4-quaterphenyl oligophenyl films onto the surfaces of CdS and oxidized silicon were presented. Using X-ray photoelectron spectroscopy (XPS), the atomic Cd and S concentrations were established to be the same on the surface of a 75-nm CdS layer formed by atomic layer deposition (ALD). The electron characteristics of 4-quaterpheyn films with a thickness of up to 8 nm were studied in the process of their deposition onto the surface of a formed CdS layer and the surface of oxidized silicon by total current spectroscopy (TCS) within an energy range from 5 to 20 eV above EF. The energy positions of major maxima in the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films were established. The positions of maxima were reproducible, when the two selected materials of substrates were used. A slight decrease in the work function from 4.2 to 4.1 eV during the thermal deposition of 4-quaterpheynl onto the CdS surface was established. The work function was revealed to grow from 4.2 to 4.5 eV, when a 4-quaterphenyl film was deposited onto the surface of oxidized silicon. Some possible mechanisms of physicochemical interaction between the 4-quaterphenyl film and the surfaces of the studied substrates that lead to different work function values observed on these substrates were discussed.

AB - Abstract: Some results of studying the unoccupied electron states and the formation of a boundary potential barrier during the thermal vacuum deposition of ultrathin 4-quaterphenyl oligophenyl films onto the surfaces of CdS and oxidized silicon were presented. Using X-ray photoelectron spectroscopy (XPS), the atomic Cd and S concentrations were established to be the same on the surface of a 75-nm CdS layer formed by atomic layer deposition (ALD). The electron characteristics of 4-quaterpheyn films with a thickness of up to 8 nm were studied in the process of their deposition onto the surface of a formed CdS layer and the surface of oxidized silicon by total current spectroscopy (TCS) within an energy range from 5 to 20 eV above EF. The energy positions of major maxima in the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films were established. The positions of maxima were reproducible, when the two selected materials of substrates were used. A slight decrease in the work function from 4.2 to 4.1 eV during the thermal deposition of 4-quaterpheynl onto the CdS surface was established. The work function was revealed to grow from 4.2 to 4.5 eV, when a 4-quaterphenyl film was deposited onto the surface of oxidized silicon. Some possible mechanisms of physicochemical interaction between the 4-quaterphenyl film and the surfaces of the studied substrates that lead to different work function values observed on these substrates were discussed.

KW - 4-quaterphenyl

KW - CdS atomic layer deposition

KW - electron properties

KW - low-energy electron spectroscopy

KW - phenylene oligomers

KW - ultrathin films

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85121432454&partnerID=8YFLogxK

U2 - 10.1134/S1063783421080138

DO - 10.1134/S1063783421080138

M3 - Article

AN - SCOPUS:85121432454

VL - 63

SP - 1333

EP - 1338

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 8

ER -