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Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films. / Otrokov, M. M.; Rusinov, I. P.; Blanco-Rey, M.; Hoffmann, M.; Vyazovskaya, A. Yu; Eremeev, S. V.; Ernst, A.; Echenique, P. M.; Arnau, A.; Chulkov, E. V.

In: Physical Review Letters, Vol. 122, No. 10, 107202, 13.03.2019, p. 107202.

Research output: Contribution to journal › Article › peer-review

Harvard

Otrokov, MM, Rusinov, IP, Blanco-Rey, M, Hoffmann, M, Vyazovskaya, AY, Eremeev, SV, Ernst, A, Echenique, PM, Arnau, A & Chulkov, EV 2019, 'Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films', Physical Review Letters, vol. 122, no. 10, 107202, pp. 107202. https://doi.org/10.1103/PhysRevLett.122.107202

APA

Otrokov, M. M., Rusinov, I. P., Blanco-Rey, M., Hoffmann, M., Vyazovskaya, A. Y., Eremeev, S. V., Ernst, A., Echenique, P. M., Arnau, A., & Chulkov, E. V. (2019). Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films. Physical Review Letters, 122(10), 107202. [107202]. https://doi.org/10.1103/PhysRevLett.122.107202

Vancouver

Otrokov MM, Rusinov IP, Blanco-Rey M, Hoffmann M, Vyazovskaya AY, Eremeev SV et al. Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films. Physical Review Letters. 2019 Mar 13;122(10):107202. 107202. https://doi.org/10.1103/PhysRevLett.122.107202

Author

Otrokov, M. M. ; Rusinov, I. P. ; Blanco-Rey, M. ; Hoffmann, M. ; Vyazovskaya, A. Yu ; Eremeev, S. V. ; Ernst, A. ; Echenique, P. M. ; Arnau, A. ; Chulkov, E. V. / Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films. In: Physical Review Letters. 2019 ; Vol. 122, No. 10. pp. 107202.

BibTeX

@article{1731d0d5330a4a39b70617a40a03bb03,
title = "Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films",
abstract = "Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.",
keywords = "ELECTRONIC-STRUCTURE, SPIN, FERROMAGNETISM, CRYSTAL, SURFACES, SCHEMES, SPECTRA, SYSTEMS, ORDER, FIELD",
author = "Otrokov, {M. M.} and Rusinov, {I. P.} and M. Blanco-Rey and M. Hoffmann and Vyazovskaya, {A. Yu} and Eremeev, {S. V.} and A. Ernst and Echenique, {P. M.} and A. Arnau and Chulkov, {E. V.}",
year = "2019",
month = mar,
day = "13",
doi = "10.1103/PhysRevLett.122.107202",
language = "English",
volume = "122",
pages = "107202",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "10",

}

RIS

TY - JOUR

T1 - Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

AU - Otrokov, M. M.

AU - Rusinov, I. P.

AU - Blanco-Rey, M.

AU - Hoffmann, M.

AU - Vyazovskaya, A. Yu

AU - Eremeev, S. V.

AU - Ernst, A.

AU - Echenique, P. M.

AU - Arnau, A.

AU - Chulkov, E. V.

PY - 2019/3/13

Y1 - 2019/3/13

N2 - Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.

AB - Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.

KW - ELECTRONIC-STRUCTURE

KW - SPIN

KW - FERROMAGNETISM

KW - CRYSTAL

KW - SURFACES

KW - SCHEMES

KW - SPECTRA

KW - SYSTEMS

KW - ORDER

KW - FIELD

UR - http://www.scopus.com/inward/record.url?scp=85062997099&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/unique-thicknessdependent-properties-van-der-waals-interlayer-antiferromagnet-mnbi2te4-films

U2 - 10.1103/PhysRevLett.122.107202

DO - 10.1103/PhysRevLett.122.107202

M3 - Article

C2 - 30932645

AN - SCOPUS:85062997099

VL - 122

SP - 107202

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 10

M1 - 107202

ER -

ID: 41262757