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Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride. / Гогина, Ольга Андреевна; Петров, Юрий Владимирович; Вывенко, Олег Федорович; Kovalchuk, Sviatoslav; Bolotin, Kirill.

In: JETP Letters, Vol. 121, No. 1, 27.02.2025, p. 3-9.

Research output: Contribution to journal › Article › peer-review

Harvard

Гогина, ОА, Петров, ЮВ, Вывенко, ОФ, Kovalchuk, S & Bolotin, K 2025, 'Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride', JETP Letters, vol. 121, no. 1, pp. 3-9. https://doi.org/10.1134/S0021364024603531

APA

Гогина, О. А., Петров, Ю. В., Вывенко, О. Ф., Kovalchuk, S., & Bolotin, K. (2025). Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride. JETP Letters, 121(1), 3-9. https://doi.org/10.1134/S0021364024603531

Vancouver

Гогина ОА, Петров ЮВ, Вывенко ОФ, Kovalchuk S, Bolotin K. Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride. JETP Letters. 2025 Feb 27;121(1):3-9. https://doi.org/10.1134/S0021364024603531

Author

Гогина, Ольга Андреевна ; Петров, Юрий Владимирович ; Вывенко, Олег Федорович ; Kovalchuk, Sviatoslav ; Bolotin, Kirill. / Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride. In: JETP Letters. 2025 ; Vol. 121, No. 1. pp. 3-9.

BibTeX

@article{830db8efa10149c19c94cd58f7748895,
title = "Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride",
abstract = "Hexagonal boron nitride is distinguished among solid-state materials with luminescent properties as a material to create single-photon sources efficiently emitting at room temperature. In this work, it is demonstrated that helium ion irradiation with fluences of (1–5) × 10¹⁴ ion/cm² increases the ultraviolet radiation intensity with a maximum at a wavelength of 320 nm due to the formation of new luminescent centers. The subsequent electron irradiation further increases the intensity of 320 nm luminescence, apparently due to the formation of carbon-containing defects in the volume of hBN through recombination-enhanced migration. On the contrary, the intense helium ion irradiation stimulates the formation of nonradiative recombination centers, which reduce the lifetime of nonequilibrium charge carriers.",
keywords = "Cathodoluminescence, Ion-Induced Defects, Hexagonal Boron Nitride, Scanning Electron Microscopy, single-photon sources",
author = "Гогина, {Ольга Андреевна} and Петров, {Юрий Владимирович} and Вывенко, {Олег Федорович} and Sviatoslav Kovalchuk and Kirill Bolotin",
year = "2025",
month = feb,
day = "27",
doi = "10.1134/S0021364024603531",
language = "русский",
volume = "121",
pages = "3--9",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride

AU - Гогина, Ольга Андреевна

AU - Петров, Юрий Владимирович

AU - Вывенко, Олег Федорович

AU - Kovalchuk, Sviatoslav

AU - Bolotin, Kirill

PY - 2025/2/27

Y1 - 2025/2/27

N2 - Hexagonal boron nitride is distinguished among solid-state materials with luminescent properties as a material to create single-photon sources efficiently emitting at room temperature. In this work, it is demonstrated that helium ion irradiation with fluences of (1–5) × 10¹⁴ ion/cm² increases the ultraviolet radiation intensity with a maximum at a wavelength of 320 nm due to the formation of new luminescent centers. The subsequent electron irradiation further increases the intensity of 320 nm luminescence, apparently due to the formation of carbon-containing defects in the volume of hBN through recombination-enhanced migration. On the contrary, the intense helium ion irradiation stimulates the formation of nonradiative recombination centers, which reduce the lifetime of nonequilibrium charge carriers.

AB - Hexagonal boron nitride is distinguished among solid-state materials with luminescent properties as a material to create single-photon sources efficiently emitting at room temperature. In this work, it is demonstrated that helium ion irradiation with fluences of (1–5) × 10¹⁴ ion/cm² increases the ultraviolet radiation intensity with a maximum at a wavelength of 320 nm due to the formation of new luminescent centers. The subsequent electron irradiation further increases the intensity of 320 nm luminescence, apparently due to the formation of carbon-containing defects in the volume of hBN through recombination-enhanced migration. On the contrary, the intense helium ion irradiation stimulates the formation of nonradiative recombination centers, which reduce the lifetime of nonequilibrium charge carriers.

KW - Cathodoluminescence

KW - Ion-Induced Defects

KW - Hexagonal Boron Nitride

KW - Scanning Electron Microscopy

KW - single-photon sources

UR - https://www.mendeley.com/catalogue/c25f16d5-f889-367d-b75a-a47a077074d3/

U2 - 10.1134/S0021364024603531

DO - 10.1134/S0021364024603531

M3 - статья

VL - 121

SP - 3

EP - 9

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 1

ER -

ID: 132536410