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Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions. / Diak, Ethan; Thomas, Amanda; Dubrovskii, Vladimir G.; LaPierre, Ray R.

In: Crystal Growth and Design, Vol. 23, No. 7, 09.06.2023, p. 5074–5082.

Research output: Contribution to journal › Article › peer-review

Harvard

Diak, E, Thomas, A, Dubrovskii, VG & LaPierre, RR 2023, 'Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions', Crystal Growth and Design, vol. 23, no. 7, pp. 5074–5082. https://doi.org/10.1021/acs.cgd.3c00315

APA

Diak, E., Thomas, A., Dubrovskii, V. G., & LaPierre, R. R. (2023). Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions. Crystal Growth and Design, 23(7), 5074–5082. https://doi.org/10.1021/acs.cgd.3c00315

Vancouver

Diak E, Thomas A, Dubrovskii VG, LaPierre RR. Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions. Crystal Growth and Design. 2023 Jun 9;23(7):5074–5082. https://doi.org/10.1021/acs.cgd.3c00315

Author

Diak, Ethan ; Thomas, Amanda ; Dubrovskii, Vladimir G. ; LaPierre, Ray R. / Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions. In: Crystal Growth and Design. 2023 ; Vol. 23, No. 7. pp. 5074–5082.

BibTeX

@article{f3545d2fd08f47ef91bb9b3fe6e55ea8,
title = "Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions",
abstract = "We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area molecular beam epitaxy....",
author = "Ethan Diak and Amanda Thomas and Dubrovskii, {Vladimir G.} and LaPierre, {Ray R.}",
year = "2023",
month = jun,
day = "9",
doi = "10.1021/acs.cgd.3c00315",
language = "English",
volume = "23",
pages = "5074–5082",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions

AU - Diak, Ethan

AU - Thomas, Amanda

AU - Dubrovskii, Vladimir G.

AU - LaPierre, Ray R.

PY - 2023/6/9

Y1 - 2023/6/9

N2 - We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area molecular beam epitaxy....

AB - We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area molecular beam epitaxy....

UR - https://www.mendeley.com/catalogue/35d6eb0f-a665-3e8e-8099-aef48a533992/

U2 - 10.1021/acs.cgd.3c00315

DO - 10.1021/acs.cgd.3c00315

M3 - Article

VL - 23

SP - 5074

EP - 5082

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 7

ER -

ID: 107099314