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Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices. / Menshchikova, T. V.; Rusinov, I. P. ; Golub, P.; Sklyadneva, Irina Yu; Heid, R.; Isaeva, Anna; Kuznetsov, V.M.; Chulkov, E. V. .

In: Journal of Materials Chemistry C, Vol. 7, No. 26, 2019, p. 7929-7937.

Research output: Contribution to journal › Article › peer-review

Harvard

Menshchikova, TV, Rusinov, IP, Golub, P, Sklyadneva, IY, Heid, R, Isaeva, A, Kuznetsov, VM & Chulkov, EV 2019, 'Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices', Journal of Materials Chemistry C, vol. 7, no. 26, pp. 7929-7937. https://doi.org/10.1039/c9tc01823a

APA

Menshchikova, T. V., Rusinov, I. P., Golub, P., Sklyadneva, I. Y., Heid, R., Isaeva, A., Kuznetsov, V. M., & Chulkov, E. V. (2019). Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices. Journal of Materials Chemistry C, 7(26), 7929-7937. https://doi.org/10.1039/c9tc01823a

Vancouver

Menshchikova TV, Rusinov IP, Golub P, Sklyadneva IY, Heid R, Isaeva A et al. Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices. Journal of Materials Chemistry C. 2019;7(26):7929-7937. https://doi.org/10.1039/c9tc01823a

Author

Menshchikova, T. V. ; Rusinov, I. P. ; Golub, P. ; Sklyadneva, Irina Yu ; Heid, R. ; Isaeva, Anna ; Kuznetsov, V.M. ; Chulkov, E. V. . / Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices. In: Journal of Materials Chemistry C. 2019 ; Vol. 7, No. 26. pp. 7929-7937.

BibTeX

@article{4716fc1748d2479b9fb5de7a5b5c91b7,
title = "Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices",
abstract = "Surface and edge electronic structures as well as chemical bonding characteristics are studied in van der Waals stanene-functionalized GaTe and InTe matrices. A topologically non-trivial character of the electronic structure is found, which results in the formation of both two- (surface) and one-dimensional (thin films) quantum spin Hall states in GaSnTe and a two-dimensional quantum spin Hall state in InSnTe. We demonstrate that these compounds are characterized by a negative band-bending effect and by the two-dimensional quantum Hall state penetrating deeply into the subsurface region. We have studied the changes in the edge electronic structure of GaSnTe thin films associated with various edge geometries and the respective dangling bonds. We also show that unsaturated coordination of the Ga atoms notably influences the electronic structure at the edge.",
author = "Menshchikova, {T. V.} and Rusinov, {I. P.} and P. Golub and Sklyadneva, {Irina Yu} and R. Heid and Anna Isaeva and V.M. Kuznetsov and Chulkov, {E. V.}",
year = "2019",
doi = "10.1039/c9tc01823a",
language = "English",
volume = "7",
pages = "7929--7937",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "26",

}

RIS

TY - JOUR

T1 - Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices

AU - Menshchikova, T. V.

AU - Rusinov, I. P.

AU - Golub, P.

AU - Sklyadneva, Irina Yu

AU - Heid, R.

AU - Isaeva, Anna

AU - Kuznetsov, V.M.

AU - Chulkov, E. V.

PY - 2019

Y1 - 2019

N2 - Surface and edge electronic structures as well as chemical bonding characteristics are studied in van der Waals stanene-functionalized GaTe and InTe matrices. A topologically non-trivial character of the electronic structure is found, which results in the formation of both two- (surface) and one-dimensional (thin films) quantum spin Hall states in GaSnTe and a two-dimensional quantum spin Hall state in InSnTe. We demonstrate that these compounds are characterized by a negative band-bending effect and by the two-dimensional quantum Hall state penetrating deeply into the subsurface region. We have studied the changes in the edge electronic structure of GaSnTe thin films associated with various edge geometries and the respective dangling bonds. We also show that unsaturated coordination of the Ga atoms notably influences the electronic structure at the edge.

AB - Surface and edge electronic structures as well as chemical bonding characteristics are studied in van der Waals stanene-functionalized GaTe and InTe matrices. A topologically non-trivial character of the electronic structure is found, which results in the formation of both two- (surface) and one-dimensional (thin films) quantum spin Hall states in GaSnTe and a two-dimensional quantum spin Hall state in InSnTe. We demonstrate that these compounds are characterized by a negative band-bending effect and by the two-dimensional quantum Hall state penetrating deeply into the subsurface region. We have studied the changes in the edge electronic structure of GaSnTe thin films associated with various edge geometries and the respective dangling bonds. We also show that unsaturated coordination of the Ga atoms notably influences the electronic structure at the edge.

UR - http://www.scopus.com/inward/record.url?scp=85068526326&partnerID=8YFLogxK

U2 - 10.1039/c9tc01823a

DO - 10.1039/c9tc01823a

M3 - Article

VL - 7

SP - 7929

EP - 7937

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 26

ER -

ID: 49494019