• A.V. Senichev
  • V.G. Talalaev
  • W. Tomm Jens
  • N. D. Zacharov
  • B.V. Novikov
  • Peter Werner
  • George E. Cirlin
Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading tothe formation of confined states within them are determined. It is shown that for tunnel barrier thicknesses in the 4–5 nm range confined hole states are likely to exist within the nanobridges. A new absorption feature, which has been observed only in structures comprising nanobridges, is assigned to transitions involving these hole states.
Original languageEnglish
Pages (from-to)385-387
JournalPhysica Status Solidi - Rapid Research Letetrs
Volume5
Issue number10-11
DOIs
StatePublished - 2011

    Research areas

  • InAs, GaAs, quantum dots, tunnel injections, carrier transfer, band structure, nanostructures

ID: 5294883