Research output: Contribution to journal › Conference article › peer-review
Triboelectric current generation in InP. / Sharov, V. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Reznik, R. R.; Cirlin, G. E.
In: Journal of Physics: Conference Series, Vol. 1400, No. 6, 066055, 11.12.2019.Research output: Contribution to journal › Conference article › peer-review
}
TY - JOUR
T1 - Triboelectric current generation in InP
AU - Sharov, V. A.
AU - Alekseev, P. A.
AU - Dunaevskiy, M. S.
AU - Reznik, R. R.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.
PY - 2019/12/11
Y1 - 2019/12/11
N2 - Energy harvesting is an area that presents the greatest potential for powering wireless low-energy electronics. Development of semiconductor-based energy harvesting is of interest. Herein we focus on studying two different energy harvesting mechanisms in indium phosphide. Piezoelectric harvesting was checked by bending vertical InP nanowires with conductive atomic force microscope (AFM) probe and simultaneously detecting current passing through the probe. No current pulses were observed that we associate with surface trapping of piezoinduced carriers. Triboelectric generation was studied by creating frictional contact between AFM tip and metal-dielectric-semiconductor (MIS) interface formed by InP layer covered with native oxide. Current peaks of 320 pA amplitude corresponding to the current density around 2.3 kA/m2 were observed under sliding reciprocating motion of the tip during AFM scanning. Achieved current density was higher than in polymer-and silicon-based triboelectric structures. The open-circuit voltage value exceeded 15 mV and the output electric power was 35 W/m2.
AB - Energy harvesting is an area that presents the greatest potential for powering wireless low-energy electronics. Development of semiconductor-based energy harvesting is of interest. Herein we focus on studying two different energy harvesting mechanisms in indium phosphide. Piezoelectric harvesting was checked by bending vertical InP nanowires with conductive atomic force microscope (AFM) probe and simultaneously detecting current passing through the probe. No current pulses were observed that we associate with surface trapping of piezoinduced carriers. Triboelectric generation was studied by creating frictional contact between AFM tip and metal-dielectric-semiconductor (MIS) interface formed by InP layer covered with native oxide. Current peaks of 320 pA amplitude corresponding to the current density around 2.3 kA/m2 were observed under sliding reciprocating motion of the tip during AFM scanning. Achieved current density was higher than in polymer-and silicon-based triboelectric structures. The open-circuit voltage value exceeded 15 mV and the output electric power was 35 W/m2.
UR - http://www.scopus.com/inward/record.url?scp=85077744691&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1400/6/066055
DO - 10.1088/1742-6596/1400/6/066055
M3 - Conference article
AN - SCOPUS:85077744691
VL - 1400
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 6
M1 - 066055
T2 - International Conference PhysicA.SPb 2019
Y2 - 22 October 2019 through 24 October 2019
ER -
ID: 98506286