Standard

Transport of hydrogen in the films made of metals, semiconductors, and dielectrics. / Denisov, E. A.; Kurdyumov, A. A.; Kompaniets, T. N.

In: Materials Science, Vol. 43, No. 5, 01.09.2007, p. 634-645.

Research output: Contribution to journal › Article › peer-review

Harvard

Denisov, EA, Kurdyumov, AA & Kompaniets, TN 2007, 'Transport of hydrogen in the films made of metals, semiconductors, and dielectrics', Materials Science, vol. 43, no. 5, pp. 634-645. https://doi.org/10.1007/s11003-008-9001-6

APA

Denisov, E. A., Kurdyumov, A. A., & Kompaniets, T. N. (2007). Transport of hydrogen in the films made of metals, semiconductors, and dielectrics. Materials Science, 43(5), 634-645. https://doi.org/10.1007/s11003-008-9001-6

Vancouver

Denisov EA, Kurdyumov AA, Kompaniets TN. Transport of hydrogen in the films made of metals, semiconductors, and dielectrics. Materials Science. 2007 Sep 1;43(5):634-645. https://doi.org/10.1007/s11003-008-9001-6

Author

Denisov, E. A. ; Kurdyumov, A. A. ; Kompaniets, T. N. / Transport of hydrogen in the films made of metals, semiconductors, and dielectrics. In: Materials Science. 2007 ; Vol. 43, No. 5. pp. 634-645.

BibTeX

@article{d0b1a689e4034a14afc0d4349eaaae27,
title = "Transport of hydrogen in the films made of metals, semiconductors, and dielectrics",
abstract = "We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.",
author = "Denisov, {E. A.} and Kurdyumov, {A. A.} and Kompaniets, {T. N.}",
year = "2007",
month = sep,
day = "1",
doi = "10.1007/s11003-008-9001-6",
language = "English",
volume = "43",
pages = "634--645",
journal = "Materials Science",
issn = "1068-820X",
publisher = "Springer Nature",
number = "5",

}

RIS

TY - JOUR

T1 - Transport of hydrogen in the films made of metals, semiconductors, and dielectrics

AU - Denisov, E. A.

AU - Kurdyumov, A. A.

AU - Kompaniets, T. N.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.

AB - We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.

UR - http://www.scopus.com/inward/record.url?scp=49349093193&partnerID=8YFLogxK

U2 - 10.1007/s11003-008-9001-6

DO - 10.1007/s11003-008-9001-6

M3 - Article

AN - SCOPUS:49349093193

VL - 43

SP - 634

EP - 645

JO - Materials Science

JF - Materials Science

SN - 1068-820X

IS - 5

ER -

ID: 36305409