TY - JOUR

T1 - Thermally induced modification of the graphene oxide film on the tantalum surface

AU - Komolov, A. S.

AU - Zhukov, Y. M.

AU - Lazneva, E. F.

AU - Aleshin, A. N.

AU - Pshenichnuk, S. A.

AU - Gerasimova, N. B.

AU - Panina, Yu A.

AU - Zashikhin, G. D.

AU - Baramygin, A. V.

N1 - Funding Information: The measurements were performed at the Centre “Physical methods of surface investigation” and at the “Centre for Diagnostics of Functional Materials for Medicine, Pharmacology and Nanoelectronics” of the Research park of St. Petersburg State University. The support from Russian Foundation for Basic Research grants 14-03-00087 , 15-29-05786 and from the St. Petersburg State University research grant 11.38.219.2014 is greatly appreciated. The partial support of A.N. Aleshin is from Russian Foundation for Basic Research grant 15-02-01897 and from the Fundamental Program of Presidium of the RAS P8. Publisher Copyright: © 2016 Elsevier Ltd Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2017/1/5

Y1 - 2017/1/5

N2 - The interface chemical reactions, the deoxygenation and the overall thermal stability of the ex situ deposited graphene oxide (GO) thick film on the polycrystalline tantalum surface were studied by means of x-ray photoelectron spectroscopy (XPS) at room temperature and after annealing up to 600 °С. The evolution of the Ta4f, C1s and O1s XPS core level spectra from the Ta/GO structure under study upon the increase of the annealing temperature was investigated with the reference to the uncovered Ta substrate surface. In the Ta/GO structure the Ta relative atomic concentration was about 1% at room temperature due to the low porosity of the GO layer while the thermal desorption of the overlayer at the elevated temperatures was accompanied by an increase of the Ta concentration up to 47% at 500 °С. The C atoms relative concentration started decreasing after the annealing at 250 °С accompanying the thermal desorption of the GO overlayer. The formation of the TaC compound starting from the 250 °С annealing temperatures was determined. The relative oxygen concentration in the GO thick film was decreased upon increasing the annealing temperature accompanying both the thermal desorption of the GO material and the thermal reduction of the GO film.

AB - The interface chemical reactions, the deoxygenation and the overall thermal stability of the ex situ deposited graphene oxide (GO) thick film on the polycrystalline tantalum surface were studied by means of x-ray photoelectron spectroscopy (XPS) at room temperature and after annealing up to 600 °С. The evolution of the Ta4f, C1s and O1s XPS core level spectra from the Ta/GO structure under study upon the increase of the annealing temperature was investigated with the reference to the uncovered Ta substrate surface. In the Ta/GO structure the Ta relative atomic concentration was about 1% at room temperature due to the low porosity of the GO layer while the thermal desorption of the overlayer at the elevated temperatures was accompanied by an increase of the Ta concentration up to 47% at 500 °С. The C atoms relative concentration started decreasing after the annealing at 250 °С accompanying the thermal desorption of the GO overlayer. The formation of the TaC compound starting from the 250 °С annealing temperatures was determined. The relative oxygen concentration in the GO thick film was decreased upon increasing the annealing temperature accompanying both the thermal desorption of the GO material and the thermal reduction of the GO film.

KW - Graphene oxide

KW - Surfaces and interfaces

KW - Tantalum oxide

KW - Thermal treatment

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84994592420&partnerID=8YFLogxK

U2 - 10.1016/j.matdes.2016.10.023

DO - 10.1016/j.matdes.2016.10.023

M3 - Article

VL - 113

SP - 319

EP - 325

JO - Materials and Design

JF - Materials and Design

SN - 0261-3069

ER -