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The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide. / Вывенко, Олег Федорович; Бондаренко, Антон Сергеевич; Убыйвовк, Евгений Викторович; Шапенков, Севастьян Владимирович; Pechnikov, Alexei; Nikolaev, Vladimir; Степанов, С.И.

In: Crystallography Reports, Vol. 69, No. 1, 01.02.2024, p. 23–28.

Research output: Contribution to journalArticlepeer-review

Harvard

Вывенко, ОФ, Бондаренко, АС, Убыйвовк, ЕВ, Шапенков, СВ, Pechnikov, A, Nikolaev, V & Степанов, СИ 2024, 'The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide', Crystallography Reports, vol. 69, no. 1, pp. 23–28. https://doi.org/10.1134/s1063774523601302

APA

Вывенко, О. Ф., Бондаренко, А. С., Убыйвовк, Е. В., Шапенков, С. В., Pechnikov, A., Nikolaev, V., & Степанов, С. И. (2024). The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide. Crystallography Reports, 69(1), 23–28. https://doi.org/10.1134/s1063774523601302

Vancouver

Author

Вывенко, Олег Федорович ; Бондаренко, Антон Сергеевич ; Убыйвовк, Евгений Викторович ; Шапенков, Севастьян Владимирович ; Pechnikov, Alexei ; Nikolaev, Vladimir ; Степанов, С.И. / The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide. In: Crystallography Reports. 2024 ; Vol. 69, No. 1. pp. 23–28.

BibTeX

@article{1b3f79ee835c4e4dbfc60206856bbf86,
title = "The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide",
abstract = "Abstract: The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.",
author = "Вывенко, {Олег Федорович} and Бондаренко, {Антон Сергеевич} and Убыйвовк, {Евгений Викторович} and Шапенков, {Севастьян Владимирович} and Alexei Pechnikov and Vladimir Nikolaev and С.И. Степанов",
year = "2024",
month = feb,
day = "1",
doi = "10.1134/s1063774523601302",
language = "English",
volume = "69",
pages = "23–28",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide

AU - Вывенко, Олег Федорович

AU - Бондаренко, Антон Сергеевич

AU - Убыйвовк, Евгений Викторович

AU - Шапенков, Севастьян Владимирович

AU - Pechnikov, Alexei

AU - Nikolaev, Vladimir

AU - Степанов, С.И.

PY - 2024/2/1

Y1 - 2024/2/1

N2 - Abstract: The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.

AB - Abstract: The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.

UR - https://www.mendeley.com/catalogue/bca70a32-2bd9-3c9d-881c-f3cce9b16011/

U2 - 10.1134/s1063774523601302

DO - 10.1134/s1063774523601302

M3 - Article

VL - 69

SP - 23

EP - 28

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -

ID: 128110549